CALCULATION OF THE OPTICAL-PROPERTIES OF AS MOLECULES ON SI SUBSTRATES

被引:3
作者
SHEN, TH
MATTHAI, CC
机构
[1] Department of Physics and Astronomy, University of Wales, College of Cardiff, Cardiff, CF2 3YB
关键词
D O I
10.1016/0039-6028(93)91051-P
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
We have calculated the imaginary part of the dielectric function for the Si(100)(2 x 1) and As/Si(100)(2 x 1) surfaces. The difference in the intensities as function of energy is found to be in excellent agreement with experiment.
引用
收藏
页码:672 / 675
页数:4
相关论文
共 12 条
[1]   DIELECTRIC FUNCTIONS AND OPTICAL-PARAMETERS OF SI, GE, GAP, GAAS, GASB, INP, INAS, AND INSB FROM 1.5 TO 6.0 EV [J].
ASPNES, DE ;
STUDNA, AA .
PHYSICAL REVIEW B, 1983, 27 (02) :985-1009
[2]   NONLOCAL PSEUDOPOTENTIAL CALCULATIONS FOR ELECTRONIC-STRUCTURE OF 11 DIAMOND AND ZINCBLENDE SEMICONDUCTORS [J].
CHELIKOWSKY, JR ;
COHEN, ML .
PHYSICAL REVIEW B, 1976, 14 (02) :556-582
[3]  
CHUNG CY, 1985, PHYS REV, V31, P2069
[4]   OPTICAL PROPERTIES OF AG AND CU [J].
EHRENREICH, H ;
PHILIPP, HR .
PHYSICAL REVIEW, 1962, 128 (04) :1622-+
[5]   OBSERVATION OF INTERFACE PHONONS BY LIGHT-SCATTERING FROM EPITAXIAL SB MONOLAYERS ON III-V SEMICONDUCTORS [J].
HUNERMANN, M ;
GEURTS, J ;
RICHTER, W .
PHYSICAL REVIEW LETTERS, 1991, 66 (05) :640-643
[6]   ELECTRON CORRELATION IN SEMICONDUCTORS AND INSULATORS - BAND-GAPS AND QUASI-PARTICLE ENERGIES [J].
HYBERTSEN, MS ;
LOUIE, SG .
PHYSICAL REVIEW B, 1986, 34 (08) :5390-5413
[7]  
HYBERTSEN MS, 1986, PHYS REV B, V34, P4033
[8]  
ROSSOW U, 1992, SURF SCI, V278
[9]   PRESSURE-DEPENDENCE OF THE SCHOTTKY-BARRIER HEIGHT AT THE NICKEL-SILICIDE SILICON INTERFACE [J].
SHEN, TH ;
MATTHAI, CC .
JOURNAL OF PHYSICS-CONDENSED MATTER, 1991, 3 (05) :613-615
[10]   THE ELECTRONIC-STRUCTURE OF SI(100) AND AS/SI(100) SURFACES [J].
SHEN, TH ;
MATTHAI, CC .
JOURNAL OF PHYSICS-CONDENSED MATTER, 1991, 3 (32) :6169-6172