ON THE ELECTRONIC-STRUCTURE OF EXTERNALLY DELTA-DOPED QUANTUM-WELLS

被引：1

作者：

CHICO, L ^{[1
]}

JASKOLSKI, W ^{[1
]}

VELASCO, VR ^{[1
]}

机构：

[1] CSIC,INST CIENCIAS MAT,MADRID 6,SPAIN

来源：

CZECHOSLOVAK JOURNAL OF PHYSICS | 1993年 / 43卷 / 9-10期

关键词：

D O I：

10.1007/BF01595275

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The electronic structure of barrier delta-doped quantum wells is studied by means of self-consistent calculations. The particularly high density of the two-dimensional electron gas is here further discussed. The shapes of the self-consistent potentials and the resultant carrier distributions are discussed in order to clarify some confusing issues that have appeared in the literature.

引用

收藏

页码：893 / 898

页数：6

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