NON-OHMIC CONDUCTION IN BISMUTH

被引：11

|

作者：

SCHILLINGER, W

机构：

来源：

IBM JOURNAL OF RESEARCH AND DEVELOPMENT | 1964年 / 8卷 / 03期

关键词：

D O I：

10.1147/rd.83.0295

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

引用

收藏

页码：295 / &

相关论文

共 50 条

[41] The electric pressure jump in the hydraulic model in a non-ohmic/non-ohmic fluid interface
Reyes, FV
Castellanos, A
2004 ANNUAL REPORT CONFERENCE ON ELECTRICAL INSULATION AND DIELECTRIC PHENOMENA, 2004, : 118 - 121
[42] ACOUSTO-ELECTRIC EXPLANATION OF NON-OHMIC BEHAVIOR IN PIEZOELECTRIC SEMICONDUCTORS AND BISMUTH
HUTSON, AR
PHYSICAL REVIEW LETTERS, 1962, 9 (07) : 296 - &
[43] NON-OHMIC CONDUCTION IN GLOW-DISCHARGE A-SI - H FILMS
ZHOU, JH
KONG, GL
ZHANG, DL
PHILOSOPHICAL MAGAZINE LETTERS, 1988, 58 (02) : 117 - 122
[44] NON-OHMIC CONDUCTION AND WEAK LOCALIZATION IN 1T-TaS2.
Uchida, Shin-ichi
Tanaka, Shoji
Physica B: Physics of Condensed Matter & C: Atomic, Molecular and Plasma Physics, Optics, 1982, 117-118 (Pt II): : 673 - 675
[45] NON-OHMIC CONDUCTION AND WEAK LOCALIZATION IN 1T-TAS2
UCHIDA, S
TANAKA, S
JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1984, 53 (02) : 667 - 675
[46] NON-OHMIC BEHAVIOUR IN SILICON
DAVIES, EA
GOSLING, DS
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1962, 23 (APR) : 413 - &
[47] NON-OHMIC CONDUCTION AND WEAK LOCALIZATION IN 1T-TAS2
UCHIDA, S
TANAKA, S
PHYSICA B & C, 1983, 117 (MAR): : 673 - 675
[48] Electric field induced non-ohmic conduction in the 2D insulating phase
Inst for High Pressure Physics, Moscow, Russia
Surf Sci, 1-3 (941-944):
[49] NON-OHMIC ELECTRON CONDUCTION IN SILICON SURFACE INVERSION LAYERS AT LOW-TEMPERATURES
HESS, K
NEUGROSCHEL, A
SHIUE, CC
SAH, CT
JOURNAL OF APPLIED PHYSICS, 1975, 46 (04) : 1721 - 1727
[50] Electric field induced non-ohmic conduction in the 2D insulating phase
Pudalov, VM
DIorio, M
Campbell, JW
SURFACE SCIENCE, 1996, 361 (1-3) : 941 - 944

← 1 2 3 4 5 →