MEASUREMENT OF VERY LOW TUNNELING CURRENT-DENSITY IN SIO2 USING THE FLOATING-GATE TECHNIQUE

被引：18

作者：

FISHBEIN, B

KRAKAUER, D

DOYLE, B

机构：

[1] Advanced Semiconductor Development Group, Digital Equipment Corporation, Hudson

来源：

IEEE ELECTRON DEVICE LETTERS | 1991年 / 12卷 / 12期

关键词：

D O I：

10.1109/55.116965

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The floating-gate technique for measuring extremely low gate currents has been adapted to the measurement of Fowler-Nordheim tunneling currents in metal-oxide-semiconductor (MOS) capacitors. Using a special structure consisting of an MOS capacitor and a monitor transistor sharing a common-gate electrode, it has proved possible to measure tunneling current densities as low as 2 x 10(-13) A/cm2. The Fowler-Nordheim tunneling relationship was found to be obeyed over the entire measurable range of current density.

引用

页码：713 / 715

页数：3

共 8 条

[1]

CHEN IC, 1985, IEEE T ELECTRON DEV, V32, P413, DOI 10.1109/T-ED.1985.21957

[2]

FISHBEIN B, 1990, MAR P INT REL PHYS S, P159

[3]

HABAS P, UNPUB IEEE T ELECTRO

[4]

LIANG MS, 1984, IEEE T ELECTRON DEV, V31, P1238, DOI 10.1109/T-ED.1984.21694