SPUTTER DEPOSITION OF EPITAXIAL Y1BA2CU3OX-FILMS ON SRTIO3, MGO, LAALO3, NDGAO3 AND YSZ/SAPPHIRE SUBSTRATES

被引：0
|
作者：
GIERES, G
SCHMIDT, H
HRADIL, K
HOSLER, W
SEEBOCK, R
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来源：
PHYSICA C | 1991年 / 185卷
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O59 [应用物理学];
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摘要：
Thin films of Y1Ba2Cu3Ox have been prepared by sputter deposition. The sputter parameters like gas pressure, gas mixture, distance target-substrate and deposition temperature have been varied in order to find optimum conditions for epitaxial film growth. With optimum conditions T(c) > 90 K and critical current densities j(c) > 5*10(6) A/cm2 could be achieved on standard substrates like SrTiO3, LaAlO3, MgO and NdGaO3. On sapphire substrates with an RF-sputtered epitaxial buffer layer of YSZ the YBCO films reached T(c) > 90 K and j(c) > 2*10(6) A/cm2 at 77 K.
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页码：2115 / 2116
页数：2
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