3-DIMENSIONAL SIMULATION OF ION-ENHANCED DRY-ETCH PROCESSES

被引：13
作者：
PELKA, J
机构：
[1] Fraunhofer-Institut für Mikrostrukturtechnik (IMT), D-1000 Berlin 33
来源：
MICROELECTRONIC ENGINEERING | 1991年 / 14卷 / 3-4期
关键词：
CELL MODEL; DRY ETCHING; MICROLOADING; MONTE-CARLO METHODS; SIMULATION; SURFACE PROCESSES;
D O I：
10.1016/0167-9317(91)90012-3
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A new approach for dry-etch simulation is presented which combines the features of a three-dimensional cell model with Monte-Carlo methods. This algorithm is able to simulate etching by elementary processes considering different kinds of particles coming out of the plasma. Some basic process models are discussed using the results obtained from this new approach. Additionally, simulations of three-dimensional geometrical effects are shown which cannot be achieved from common two-dimensional profile simulators.
引用
收藏
页码：269 / 281
页数：13
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