Investigation of Nanostructured Thermoelectric Material Si0.8Ge0.2P0.022 for Application in Multisectional Legs of Thermoelectric Elements

被引:0
|
作者
Shtern, Yu. I. [1 ]
Sherchenkov, A. A. [1 ]
Babich, A. V. [1 ]
Rogachev, M. S. [1 ]
机构
[1] Natl Res Univ Elect Technol, 1 Shokin Sq, Moscow 124498, Russia
关键词
Thermoelectricity; High-temperature; Si0.8Ge0.2P0.022; Nanostructured; Thermoelectric generators; Thermoelement; Multisectional leg;
D O I
10.21272/jnep.8(4(1)).04049
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Complex investigations of high-temperature thermoelectric material nanostructured Si0.8Ge0.2P0.022 n-type were carried out. Temperature dependencies of conductivity, thermoelectric coefficient and thermal conductivity were studied. Obtained data were used for the calculation of temperature dependence of ZT. Maximum value of ZT = 1.04 is observed at 900 degrees C. Differential scanning calorimetry indicates on the high thermal stability of the nanostructured material. It was established that optimal temperature range for the application of the material in the multisectional legs of thermoelements is 600-900 degrees C.
引用
收藏
页数:3
相关论文
共 1 条
  • [1] Thermoelectric coefficient of the non-homogeneously doped p-n junctions made on Si and Pb0.8Sn0.2Te
    Gasparyan, FV
    Aroutiounian, VM
    Abrahamian, YA
    Vahanian, AI
    SENSORS AND ACTUATORS A-PHYSICAL, 2004, 113 (03) : 370 - 375