共 32 条
- [21] MODELING OF ELECTRON-TRANSPORT IN REAL SPACE IN GAAS/ALXGA1-XAS HETEROSTRUCTURES (WITH LOW AND HIGH VALUES OF X) SOVIET PHYSICS SEMICONDUCTORS-USSR, 1990, 24 (06): : 684 - 689
- [23] ELECTRON-TRANSPORT IN HEAVILY DOPED AND COMPENSATED N-TYPE GAAS IN THE TEMPERATURE-RANGE 4.2-300-K PHYSICAL REVIEW B, 1980, 22 (06): : 2962 - 2967
- [24] SINGLE-CARRIER SPACE-CHARGE CONTROLLED CONDUCTION VS BALLISTIC TRANSPORT IN GAAS DEVICES AT 77-DEGREES-K ELECTRON DEVICE LETTERS, 1981, 2 (08): : 205 - 207
- [25] Ballistic-electron-emission spectroscopy of AlxGa1-xAs/GaAs heterostructures: Conduction-band offsets, transport mechanisms, and band-structure effects PHYSICAL REVIEW B, 1997, 56 (04): : 2026 - 2035
- [28] COMMENT ON SINGLE-CARRIER SPACE-CHARGE CONTROLLED CONDUCTION VS BALLISTIC TRANSPORT IN GAAS DEVICES AT 77-DEGREES-K ELECTRON DEVICE LETTERS, 1982, 3 (01): : 27 - 27
- [30] k//=0 filtering effects in ballistic electron transport through sub-surface GaAs-AlGaAs double barrier resonant tunneling structures PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2000, 6 (1-4): : 339 - 342