IMPACT OF K-SPACE TRANSFER AND BAND NONPARABOLICITY ON ELECTRON-TRANSPORT IN A GAAS BALLISTIC DIODE

被引:4
|
作者
WOOLARD, DL
TIAN, H
LITTLEJOHN, MA
TREW, RJ
KIM, KW
机构
[1] Dept. of Electr. and Comput. Eng., North Carolina State Univ., Raleigh, NC
关键词
D O I
10.1088/0268-1242/7/3B/091
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
In this paper, the results of studying a submicron GaAs ballistic diode, using a new multi-valley (GAMMA, L and X) non-parabolic hydrodynamic transport model, are presented. Numerical simulations indicate that accurately including the effects of non-parabolicity in the streaming terms and k-space transfer in the velocity and energy equations is very important in correctly determining the conductance of the device. The existence and amount of negative differential conductance was determined to be strongly influenced by both of these physical factors. Furthermore, the sensitivity of device conductance to changes in the thermal conductivity is diminished significantly when non-parabolicity is accurately incorporated.
引用
收藏
页码:B354 / B356
页数:3
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