共 50 条
- [1] CHARACTERISTICS OF COMPENSATION OF OXYGEN-DOPED GALLIUM-ARSENIDE SOVIET PHYSICS SEMICONDUCTORS-USSR, 1978, 12 (02): : 227 - 228
- [2] ELECTRONIC-STRUCTURE OF OXYGEN-DOPED GALLIUM-ARSENIDE JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1979, 12 (22): : L831 - L834
- [3] INFRARED-ABSORPTION SPECTRA OF OXYGEN-DOPED GALLIUM-ARSENIDE SOVIET PHYSICS SEMICONDUCTORS-USSR, 1976, 10 (05): : 590 - 591
- [4] ELECTRON-MOBILITY IN OPTICALLY DECOMPENSATED OXYGEN-DOPED GALLIUM-ARSENIDE SOVIET PHYSICS SEMICONDUCTORS-USSR, 1975, 9 (04): : 524 - 525
- [5] ANOMALOUS BEHAVIOR OF MOBILITY IN GALLIUM ARSENIDE DOPED WITH OXYGEN SOVIET PHYSICS SOLID STATE,USSR, 1966, 7 (10): : 2522 - +
- [6] DEEP LEVEL STUDIES OF OXYGEN DOPED GALLIUM-ARSENIDE BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1981, 26 (03): : 256 - 256
- [7] NATURE OF A DEEP DONOR CENTER IN OXYGEN-DOPED GALLIUM-PHOSPHIDE SOVIET PHYSICS SEMICONDUCTORS-USSR, 1976, 10 (08): : 940 - 942
- [8] INFLUENCE OF OXYGEN ON PROPERTIES OF GALLIUM ARSENIDE DOPED WITH TRANSITION METALS. Soviet Physics, Semiconductors (English translation of Fizika i Tekhnika Poluprovodnikov), 1976, 10 (06): : 637 - 639