PREPARATION AND PROPERTIES OF VAPOR-PHASE-EPITAXIAL-GROWN GAINASP

被引：15
作者：
ENDA, H
机构：
[1] Musashino Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS | 1979年 / 18卷 / 11期
关键词：
D O I：
10.1143/JJAP.18.2167
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
[No abstract available]
引用
收藏
页码：2167 / 2168
页数：2
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[1]   VAPOR-PHASE EPITAXIAL-GROWTH OF QUATERNARY IN1-XGAXASYP1-Y IN THE 0.75-1.35-EV BAND-GAP RANGE [J].
HYDER, SB ;
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HOOPER, CC .
APPLIED PHYSICS LETTERS, 1979, 34 (09) :584-586
[2]   GROWTH AND CHARACTERIZATION OF INGAASP-INP LATTICE-MATCHED HETEROJUNCTIONS [J].
SANKARAN, R ;
ANTYPAS, GA ;
MOON, RL ;
ESCHER, JS ;
JAMES, LW .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1976, 13 (04) :932-937
[3]   VAPOR-PHASE EPITAXIAL-GROWTH AND CHARACTERIZATION OF GA1-YINYAS1-XPX QUATERNARY ALLOYS [J].
SUGIYAMA, K ;
KOJIMA, H ;
ENDA, H ;
SHIBATA, M .
JAPANESE JOURNAL OF APPLIED PHYSICS, 1977, 16 (12) :2197-2203
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