EPITAXY OF ULTRATHIN METAL FILMS ON BCC SUBSTRATES USING LEED/AUGER TECHNIQUES

被引:0
|
作者
JACKSON, AG
机构
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1971年 / 8卷 / 01期
关键词
D O I
10.1116/1.1316266
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:14 / &
相关论文
共 50 条
  • [1] THICKNESS MEASUREMENT OF ULTRATHIN FILMS ON METAL SUBSTRATES USING ATR
    KITAJIMA, H
    HIEDA, K
    SUEMATSU, Y
    APPLIED OPTICS, 1980, 19 (18): : 3106 - 3109
  • [2] Auger electron spectroscopy in the investigation of ultrathin films in molecular beam epitaxy
    Mróz, A
    Mróz, A
    THIN SOLID FILMS, 2000, 367 (1-2) : 126 - 133
  • [3] Growth modes of ultrathin metal films on dissimilar metal substrates
    Slavin, AJ
    PROGRESS IN SURFACE SCIENCE, 1995, 50 (1-4) : 159 - 172
  • [4] Epitaxy of Fe/Cu/Si(111) ultrathin films: an Auger electron diffraction study
    Castrucci, P
    Gunnella, R
    Bernardini, R
    Montecchiari, A
    Carboni, R
    De Crescenzi, M
    SURFACE SCIENCE, 2001, 482 : 916 - 921
  • [5] STRUCTURAL STUDY OF ULTRATHIN METAL-FILMS ON TIO2 USING LEED, ARXPS AND MEED
    PAN, JM
    MASCHHOFF, BL
    DIEBOLD, U
    MADEY, TE
    SURFACE SCIENCE, 1993, 291 (03) : 381 - 394
  • [6] Plasmonic excitations in ultrathin metal films on dielectric substrates
    Li, Xiaoguang
    Teng, Ao
    Oezer, Mustafa M.
    Shen, Jian
    Weitering, Hanno H.
    Zhang, Zhenyu
    NEW JOURNAL OF PHYSICS, 2014, 16
  • [7] SILICON-ON-SAPPHIRE EPITAXY BY VACUUM SUBLIMATION - LEED-AUGER STUDIES AND ELECTRONIC PROPERTIES OF FILMS
    CHANG, CC
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1971, 8 (03): : 500 - &
  • [8] Using epitaxy to form insoluble, ultrathin films of block copolymers
    ERATO, Ibaraki, Japan
    Langmuir, 14 (3367-3370):
  • [9] Using epitaxy to form insoluble, ultrathin films of block copolymers
    Sano, M
    Wada, M
    Miyamoto, A
    Yoshimura, S
    LANGMUIR, 1996, 12 (14) : 3367 - 3370
  • [10] In-plane magnetic anisotropy of ultrathin bcc(110) transition-metal films
    DorantesDavila, J
    Pastor, GM
    PHYSICAL REVIEW LETTERS, 1996, 77 (21) : 4450 - 4453