TEM STUDY OF SILICON LASER ANNEALED AFTER THE IMPLANTATION OF LOW SOLUBILITY DOPANTS

被引：23

作者：

CULLIS, AG ^{[1
]}

WEBBER, HC ^{[1
]}

POATE, JM ^{[1
]}

CHEW, NG ^{[1
]}

机构：

[1] BELL TEL LABS INC,MURRAY HILL,NJ 07974

来源：

JOURNAL OF MICROSCOPY-OXFORD | 1980年 / 118卷 / JAN期

关键词：

D O I：

10.1111/j.1365-2818.1980.tb00244.x

中图分类号：

TH742 [显微镜];

学科分类号：

摘要：

引用

页码：41 / 49

页数：9

共 13 条

[1] TIME-RESOLVED REFLECTIVITY OF ION-IMPLANTED SILICON DURING LASER ANNEALING [J].

AUSTON, DH ;

SURKO, CM ;

VENKATESAN, TNC ;

SLUSHER, RE ;

GOLOVCHENKO, JA .

APPLIED PHYSICS LETTERS, 1978, 33 (05) :437-440

[2] SEGREGATION EFFECTS IN CU-IMPLANTED SI AFTER LASER-PULSE MELTING [J].

BAERI, P ;

CAMPISANO, SU ;

FOTI, G ;

RIMINI, E .

PHYSICAL REVIEW LETTERS, 1978, 41 (18) :1246-1249

[3] CONSTITUTIONAL SUPERCOOLING DURING CRYSTAL GROWTH FROM STIRRED MELTS .3. THE MORPHOLOGY OF THE GERMANIUM CELLULAR STRUCTURE [J].

BARDSLEY, W ;

BOULTON, JS ;

HURLE, DTJ .

SOLID-STATE ELECTRONICS, 1962, 5 (NOV-D) :395-&

[4] DEVICE FOR LASER-BEAM DIFFUSION AND HOMOGENIZATION [J].

CULLIS, AG ;

WEBBER, HC ;

BAILEY, P .

JOURNAL OF PHYSICS E-SCIENTIFIC INSTRUMENTS, 1979, 12 (08) :688-689

[5] COMPARATIVE-STUDY OF ANNEALED NEON-ION, ARGON-ION, AND KRYPTON-ION IMPLANTATION DAMAGE IN SILICON [J].

CULLIS, AG ;

SEIDEL, TE ;

MEEK, RL .

JOURNAL OF APPLIED PHYSICS, 1978, 49 (10) :5188-5198

[6] ELECTRON-MICROSCOPE STUDY OF ELECTRICALLY ACTIVE IMPURITY PRECIPITATE DEFECTS IN SILICON [J].

CULLIS, AG ;

KATZ, LE .

PHILOSOPHICAL MAGAZINE, 1974, 30 (06) :1419-1443

[7]

CULLIS AG, 1979, LASER SOLID INTERACT, P311

[8]

MAHER DM, 1978, 9TH P INT C EL MICR

[9]

MILNES AG, 1973, DEEP IMPURITIES SEMI, pCH2

[10] DEPTH OF MELTING PRODUCED BY PULSED-LASER IRRADIATION [J].

NARAYAN, J .

APPLIED PHYSICS LETTERS, 1979, 34 (05) :312-315

← 1 2 →