ELECTRONIC PASSIVATION OF GAAS-SURFACES THROUGH THE FORMATION OF ARSENIC SULFUR BONDS

被引：196
作者：
SANDROFF, CJ
HEGDE, MS
FARROW, LA
CHANG, CC
HARBISON, JP
机构：
来源：
APPLIED PHYSICS LETTERS | 1989年 / 54卷 / 04期
关键词：
D O I：
10.1063/1.101451
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：362 / 364
页数：3
相关论文
共 23 条
[11]   NEAR-IDEAL TRANSPORT IN AN ALGAAS GAAS HETEROSTRUCTURE BIPOLAR-TRANSISTOR BY NA2S.9H2O REGROWTH [J].
NOTTENBURG, RN ;
SANDROFF, CJ ;
HUMPHREY, DA ;
HOLLENBECK, TH ;
BHAT, R .
APPLIED PHYSICS LETTERS, 1988, 52 (03) :218-220
[12]  
NUZZO RG, 1987, J AM CHEM SOC, V109, P734
[13]   UNPINNED (100) GAAS-SURFACES IN AIR USING PHOTOCHEMISTRY [J].
OFFSEY, SD ;
WOODALL, JM ;
WARREN, AC ;
KIRCHNER, PD ;
CHAPPELL, TI ;
PETTIT, GD .
APPLIED PHYSICS LETTERS, 1986, 48 (07) :475-477
[14]   PASSIVATION OF THE GAAS SURFACE BY AN AMORPHOUS PHOSPHORUS OVERLAYER [J].
OLEGO, DJ ;
SCHACHTER, R ;
BAUMANN, JA .
APPLIED PHYSICS LETTERS, 1984, 45 (10) :1127-1129
[15]   DRAMATIC ENHANCEMENT IN THE GAIN OF A GAAS/ALGAAS HETEROSTRUCTURE BIPOLAR-TRANSISTOR BY SURFACE CHEMICAL PASSIVATION [J].
SANDROFF, CJ ;
NOTTENBURG, RN ;
BISCHOFF, JC ;
BHAT, R .
APPLIED PHYSICS LETTERS, 1987, 51 (01) :33-35
[16]  
SANDROFF CJ, UNPUB
[17]   SCHOTTKY-BARRIER HEIGHT ENHANCEMENT ON M-P+-N STRUCTURES INCLUDING FREE-CARRIERS [J].
SCHWARTZ, GP ;
GUALTIERI, GJ .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1986, 133 (06) :1266-1268
[18]   EFFECTS OF PASSIVATING IONIC FILMS ON THE PHOTOLUMINESCENCE PROPERTIES OF GAAS [J].
SKROMME, BJ ;
SANDROFF, CJ ;
YABLONOVITCH, E ;
GMITTER, T .
APPLIED PHYSICS LETTERS, 1987, 51 (24) :2022-2024
[19]   NEW AND UNIFIED MODEL FOR SCHOTTKY-BARRIER AND III-V INSULATOR INTERFACE STATES FORMATION [J].
SPICER, WE ;
CHYE, PW ;
SKEATH, PR ;
SU, CY ;
LINDAU, I .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (05) :1422-1433
[20]  
Wells A., 1975, STRUCTURAL INORGANIC
123