ELECTRONIC PASSIVATION OF GAAS-SURFACES THROUGH THE FORMATION OF ARSENIC SULFUR BONDS

被引：196
作者：
SANDROFF, CJ
HEGDE, MS
FARROW, LA
CHANG, CC
HARBISON, JP
机构：
来源：
APPLIED PHYSICS LETTERS | 1989年 / 54卷 / 04期
关键词：
D O I：
10.1063/1.101451
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
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页码：362 / 364
页数：3
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