ELECTRONIC-STRUCTURE OF ULTRATHIN LAYERED ZNSE/ZNS SUPERLATTICE

The crystal structures and the band structures of ultrathin layered ZnSe/ZnS superlattices are calculated by the Valence Force Field model and the self-consistent pseudopotential method. The resulting crystal structures show that the macroscopic elastic theory simulates strained structures of the present superlattices well. It is shown that some energy levels oscillate due to the symmetry with changing the layer thickness while strain causes another level splitting. The possibility that the ZnSe/ZnS superlattice on the GaAs substrate becomes the strain-induced light-hole gap material with decreasing the layer thickness is suggested. The structural stability and the band offset are also discussed. © 1990, THE PHYSICAL SOCIETY OF JAPAN. All rights reserved.