DEFECT FORMATION DURING ZN DIFFUSION IN GAAS SINGLE-CRYSTALS

被引：0
|
作者：
LUYSBERG, M [1 ]
JAGER, W [1 ]
URBAN, K [1 ]
PERRET, M [1 ]
STOLWIJK, NA [1 ]
MEHRER, H [1 ]
机构：
[1] UNIV MUNSTER, INST MET FORSCH, W-4400 MUNSTER, GERMANY
来源：
INSTITUTE OF PHYSICS CONFERENCE SERIES | 1989年 / 100期
关键词：
D O I：
暂无
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
The diffusion-induced defect formation during Zn diffusion into semi-insulating GaAs single crystals at 1167 K is characterized for various annealing conditions by analytical electron microscopy of cross-sectional specimens. The observations are correlated with Zn concentration profiles obtained by spreading-resistance measurements. The results are discussed in terms of current diffusion models.
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页码：409 / 414
页数：6
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