TETRAKIS[BIS(TRIMETHYLSILYL)METHYL]DIINDANE(4) WITH INDIUM-INDIUM BOND

被引：145

作者：

UHL, W ^{[1
]}

LAYH, M ^{[1
]}

HILLER, W ^{[1
]}

机构：

[1] UNIV TUBINGEN,INST ANORGAN CHEM,D-7400 TUBINGEN 1,FED REP GER

来源：

JOURNAL OF ORGANOMETALLIC CHEMISTRY | 1989年 / 368卷 / 02期

关键词：

D O I：

10.1016/0022-328X(89)85308-2

中图分类号：

O61 [无机化学];

学科分类号：

070301 ; 081704 ;

摘要：

引用

页码：139 / 154

页数：16

共 50 条

[1] Insertion of rhodizonic acid into the gallium-gallium and indium-indium bonds of digallane(4) and diindane(4) compounds
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[3] The insertion of chalcogen atoms into the In-In bond of tetrakis[bis(trimethylsilyl)methyl]diindane(4): Monomeric compounds with In-S-In, In-Se-In, and In-Te-In groups
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[4] Twofold insertion of isocyanides into the Ga-Ga bond of tetrakis[bis(trimethylsilyl)methyl]digallane(4)
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[6] Reactions of tetrakis[bis(trimethylsilyl)methyl]dialane(4) with methylisothiocyanate and phenylisocyanate - Insertion into the Al-Al bond and fragmentation
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[7] PREPARATION AND PROPERTIES OF "((TRIMETHYLSILYL)METHYL)INDIUM(III) COMPOUNDS
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[8] Reactions of tetrakis[bis(trimethylsilyl)methyl]digallane(4) with carboxylic acids - Substituent exchange and bridging of the Ga-Ga bond by two carboxylato groups
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[9] SYNTHESIS AND MOLECULAR-STRUCTURE OF TETRAKIS[BIS(TRIMETHYLSILYL)METHYL]DIGALLANE(4) WITH GALLIUM-GALLIUM BONDS
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[10] TETRAKIS[BIS(TRIMETHYLSILYL)METHYL]DIALUMINOXANE WITH A LINEAR AL-O-AL GROUP
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