ABSORPTION OF INFRARED RADIATION BY FREE CARRIERS IN N-TYPE GAAS

被引：0

作者：

VAKULENK.OV

LISITSA, MP

机构：

来源：

SOVIET PHYSICS SOLID STATE,USSR | 1967年 / 9卷 / 04期

关键词：

D O I：

暂无

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：769 / +

页数：1

共 50 条

[41] INFRARED ABSORPTION IN HEAVILY DOPED N-TYPE GERMANIUM
HAAS, C
PHYSICAL REVIEW, 1962, 125 (06): : 1965 - &
[42] INFRARED ABSORPTION OF N-TYPE (ZN,CD)S
POTTER, RM
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1960, 107 (03) : C61 - C61
[43] FAR INFRARED RESONANT ABSORPTION IN N-TYPE SILICON
NEURINGE.LJ
MILWARD, RC
AGGARWAL, RL
JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1966, S 21 : 582 - &
[44] INFRARED AND ELECTRICAL CHARACTERIZATION OF MULTILAYERED N-TYPE GAAS WAFERS
HOLM, RT
CALVIELLO, JA
JOURNAL OF APPLIED PHYSICS, 1979, 50 (02) : 1091 - 1096
[45] RADIATION EMITTED BY N-TYPE INSB IN THE FAR INFRARED
KOLLYUKH, AG
MALYUTENKO, VK
MOROZHENKO, VA
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1990, 24 (05): : 585 - 586
[46] ENHANCEMENT OF OPTICAL ABSORPTION BY ACOUSTOELECTRIC DOMAINS IN N-TYPE GAAS
SPEARS, DL
BRAY, R
BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1968, 13 (01): : 27 - &
[47] ABSORPTION OF INFRARED RADIATION IN N-TYPE GALLIUM PHOSPHIDE .3. STRUCTURE OF CONDUCTION BAND
SHMARTSEV, YV
REMENYUK, AD
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1970, 3 (11): : 1425 - +
[48] FREE CARRIER ABSORPTION IN N-TYPE CDTE CRYSTALS
YAMADA, S
KAWASAKI, Y
NISHIDA, O
PHYSICA STATUS SOLIDI, 1968, 26 (01): : 77 - &
[49] FREE-CARRIER ABSORPTION IN N-TYPE CDTE
STRAUSS, AJ
ISELER, GW
BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1972, 17 (03): : 326 - &
[50] FREE CARRIER ABSORPTION IN N-TYPE INDIUM SELENIDE
MARI, B
SEGURA, A
CHEVY, A
PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1985, 130 (02): : 793 - 799