FREQUENCY-EFFECTS AND PROPERTIES OF PLASMA DEPOSITED FLUORINATED SILICON-NITRIDE

被引：11
作者：
CHANG, CP
FLAMM, DL
IBBOTSON, DE
MUCHA, JA
机构：
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1988年 / 6卷 / 02期
关键词：
D O I：
10.1116/1.584063
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
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页码：524 / 532
页数：9
相关论文
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