共 50 条
- [1] CHARACTERISTICS OF DISTRIBUTION OF DENSITY OF STATES IN HEAVILY DOPED P-TYPE GAAS SOVIET PHYSICS SEMICONDUCTORS-USSR, 1976, 10 (04): : 393 - 397
- [8] TUNNELING AND SURFACE-STATES IN A CONTACT BETWEEN AU AND P-TYPE INAS SOVIET PHYSICS SEMICONDUCTORS-USSR, 1989, 23 (11): : 1229 - 1232
- [9] ELECTROLUMINESCENCE OF P-TYPE GAAS DIODES SOVIET PHYSICS SEMICONDUCTORS-USSR, 1969, 3 (01): : 125 - &