CHARACTERIZATION OF OXYGEN IN SILICON BY IR ABSORPTION - REVIEW

[1] AGGARWAL RL, 1965, PHYS REV A, V138, P882

[2] ALEXANDROVA GI, 1967, SOV AT ENERGY, V23, P797

[3] ANDREANI AM, 1971, METH PHYS ANALYSE GA, V7, P269

[4] DETERMINATION OF PARTS PER BILLION OF OXYGEN IN SILICON [J]. SOLID-STATE ELECTRONICS, 1970, 13 (11) : 1431 - &

[5] BAKER JA, 1971, DOW CORNING SILICON

[6] ELECTRON IRRADIATION DAMAGE IN SILICON CONTAINING CARBON AND OXYGEN [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1970, 31 (04) : 739 - &

[7] APPLICATION OF QUANTUM DEFECT TECHNIQUES TO PHOTOIONIZATION OF IMPURITIES IN SEMICONDUCTORS [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1967, 28 (10) : 2087 - &

[8] BIRMAN JL, 1974, ENCYCLOPEDIA PHYSICS, V25, P407

[9] ABSORPTION OF OXYGEN IN SILICON IN NEAR AND FAR INFRARED [J]. PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1970, 317 (1528) : 133 - +

[10] INFRA-RED ABSORPTION IN SILICON [J]. PHYSICAL REVIEW, 1950, 77 (05): : 727 - 728

[1] AGGARWAL RL, 1965, PHYS REV A, V138, P882

[2] ALEXANDROVA GI, 1967, SOV AT ENERGY, V23, P797

[3] ANDREANI AM, 1971, METH PHYS ANALYSE GA, V7, P269

[4] DETERMINATION OF PARTS PER BILLION OF OXYGEN IN SILICON [J]. SOLID-STATE ELECTRONICS, 1970, 13 (11) : 1431 - &

[5] BAKER JA, 1971, DOW CORNING SILICON

[6] ELECTRON IRRADIATION DAMAGE IN SILICON CONTAINING CARBON AND OXYGEN [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1970, 31 (04) : 739 - &

[7] APPLICATION OF QUANTUM DEFECT TECHNIQUES TO PHOTOIONIZATION OF IMPURITIES IN SEMICONDUCTORS [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1967, 28 (10) : 2087 - &

[8] BIRMAN JL, 1974, ENCYCLOPEDIA PHYSICS, V25, P407

[9] ABSORPTION OF OXYGEN IN SILICON IN NEAR AND FAR INFRARED [J]. PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1970, 317 (1528) : 133 - +

[10] INFRA-RED ABSORPTION IN SILICON [J]. PHYSICAL REVIEW, 1950, 77 (05): : 727 - 728