CYCLOTRON-RESONANCE STUDIES OF GAINP AND ALGAINP

被引:35
作者
EMANUELSSON, P [1 ]
DRECHSLER, M [1 ]
HOFMANN, DM [1 ]
MEYER, BK [1 ]
MOSER, M [1 ]
SCHOLZ, F [1 ]
机构
[1] UNIV STUTTGART,INST PHYS 4,D-70569 STUTTGART,GERMANY
关键词
D O I
10.1063/1.111445
中图分类号
O59 [应用物理学];
学科分类号
摘要
The electron effective masses for Al0.15Ga0.35In0.5P and Ga0.5In0.5P have been investigated using conventional and optically detected cyclotron resonance. For AlGaInP (partly ordered) it is determined to be m*=(0.14+/-0.01) m0. For disordered GaInP the mass is found to be m*=(0.092+/-0.003) mo and for ordered material (band gap reduction approximately 50 meV) m*=(0.088+/-0.003) mo. The experimentally deduced values are compared with those obtained from five-band k.p calculation.
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页码:2849 / 2851
页数:3
相关论文
共 9 条
[1]   EXCITON LOCALIZATION EFFECTS AND HETEROJUNCTION BAND OFFSET IN (GA,IN)P-(AL,GA,IN)P MULTIPLE-QUANTUM WELLS [J].
DAWSON, MD ;
DUGGAN, G .
PHYSICAL REVIEW B, 1993, 47 (19) :12598-12604
[2]   K-].P-] PERTURBATION-THEORY IN III-V COMPOUNDS AND ALLOYS - RE-EXAMINATION [J].
HERMANN, C ;
WEISBUCH, C .
PHYSICAL REVIEW B, 1977, 15 (02) :823-833
[3]   METALORGANIC CHEMICAL VAPOR-DEPOSITION GROWTH OF GA0.5IN0.5P ORDERED ALLOYS BY PHOSPHINE MODULATION [J].
LEE, MK ;
HORNG, RH ;
HAUNG, LC .
JOURNAL OF CRYSTAL GROWTH, 1992, 124 (1-4) :358-362
[4]   DETERMINATION OF THE GALNP ALGALNP BAND OFFSET [J].
LIEDENBAUM, CTHF ;
VALSTER, A ;
SEVERENS, ALGJ ;
THOOFT, GW .
APPLIED PHYSICS LETTERS, 1990, 57 (25) :2698-2700
[5]  
MADELUNG O, 1982, LANDOLTBORNSTEIN NUM, V17, P62907
[6]   POLARIZED BAND-EDGE PHOTOLUMINESCENCE AND ORDERING IN GA0.52IN0.48P [J].
MASCARENHAS, A ;
KURTZ, S ;
KIBBLER, A ;
OLSON, JM .
PHYSICAL REVIEW LETTERS, 1989, 63 (19) :2108-2111
[7]   BAND-GAP NARROWING IN ORDERED AND DISORDERED SEMICONDUCTOR ALLOYS [J].
WEI, SH ;
ZUNGER, A .
APPLIED PHYSICS LETTERS, 1990, 56 (07) :662-664
[8]   BAND-GAPS AND SPIN-ORBIT-SPLITTING OF ORDERED AND DISORDERED ALXGA1-XAS AND GAASXSB1-X ALLOYS [J].
WEI, SH ;
ZUNGER, A .
PHYSICAL REVIEW B, 1989, 39 (05) :3279-3304
[9]   ELECTRON EFFECTIVE-MASS IN DIRECT-BAND-GAP GAAS1-XPX ALLOYS [J].
WETZEL, C ;
MEYER, BK ;
OMLING, P .
PHYSICAL REVIEW B, 1993, 47 (23) :15588-15592