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DIELECTRIC CAP DISORDERING OF GAAS/ALGAAS MULTIPLE-QUANTUM-WELL BY USING PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITED SIN CAPPING LAYER
被引:12
作者
:
CHOI, WJ
论文数:
0
引用数:
0
h-index:
0
机构:
YONSEI UNIV, DEPT PHYS, SEOUL 120749, SOUTH KOREA
CHOI, WJ
LEE, S
论文数:
0
引用数:
0
h-index:
0
机构:
YONSEI UNIV, DEPT PHYS, SEOUL 120749, SOUTH KOREA
LEE, S
KIM, Y
论文数:
0
引用数:
0
h-index:
0
机构:
YONSEI UNIV, DEPT PHYS, SEOUL 120749, SOUTH KOREA
KIM, Y
KIM, SK
论文数:
0
引用数:
0
h-index:
0
机构:
YONSEI UNIV, DEPT PHYS, SEOUL 120749, SOUTH KOREA
KIM, SK
LEE, JI
论文数:
0
引用数:
0
h-index:
0
机构:
YONSEI UNIV, DEPT PHYS, SEOUL 120749, SOUTH KOREA
LEE, JI
KANG, KN
论文数:
0
引用数:
0
h-index:
0
机构:
YONSEI UNIV, DEPT PHYS, SEOUL 120749, SOUTH KOREA
KANG, KN
PARK, N
论文数:
0
引用数:
0
h-index:
0
机构:
YONSEI UNIV, DEPT PHYS, SEOUL 120749, SOUTH KOREA
PARK, N
PARK, HL
论文数:
0
引用数:
0
h-index:
0
机构:
YONSEI UNIV, DEPT PHYS, SEOUL 120749, SOUTH KOREA
PARK, HL
CHO, K
论文数:
0
引用数:
0
h-index:
0
机构:
YONSEI UNIV, DEPT PHYS, SEOUL 120749, SOUTH KOREA
CHO, K
机构
:
[1]
YONSEI UNIV, DEPT PHYS, SEOUL 120749, SOUTH KOREA
[2]
SOGANG UNIV, DEPT PHYS, SEOUL 100611, SOUTH KOREA
来源
:
JOURNAL OF MATERIALS SCIENCE LETTERS
|
1995年
/ 14卷
/ 20期
关键词
:
D O I
:
10.1007/BF00462206
中图分类号
:
T [工业技术];
学科分类号
:
08 ;
摘要
:
[No abstract available]
引用
收藏
页码:1433 / 1435
页数:3
相关论文
共 13 条
[1]
COMPOSITIONAL DISORDERING OF GAAS/ALGAAS MULTIPLE QUANTUM WELLS USING ION-BOMBARDMENT AT ELEVATED-TEMPERATURES
ANDERSON, KK
论文数:
0
引用数:
0
h-index:
0
机构:
MIT,DEPT ELECT ENGN & COMP SCI,CAMBRIDGE,MA 02139
ANDERSON, KK
DONNELLY, JP
论文数:
0
引用数:
0
h-index:
0
机构:
MIT,DEPT ELECT ENGN & COMP SCI,CAMBRIDGE,MA 02139
DONNELLY, JP
WANG, CA
论文数:
0
引用数:
0
h-index:
0
机构:
MIT,DEPT ELECT ENGN & COMP SCI,CAMBRIDGE,MA 02139
WANG, CA
WOODHOUSE, JD
论文数:
0
引用数:
0
h-index:
0
机构:
MIT,DEPT ELECT ENGN & COMP SCI,CAMBRIDGE,MA 02139
WOODHOUSE, JD
HAUS, HA
论文数:
0
引用数:
0
h-index:
0
机构:
MIT,DEPT ELECT ENGN & COMP SCI,CAMBRIDGE,MA 02139
HAUS, HA
[J].
APPLIED PHYSICS LETTERS,
1988,
53
(17)
: 1632
-
1634
[2]
SUPPRESSION OF BANDGAP SHIFTS IN GAAS/ALGAAS QUANTUM-WELLS USING STRONTIUM FLUORIDE CAPS
BEAUVAIS, J
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV SHEFFIELD,FAC SERC III-V SEMICONDUCTOR,DEPT ELECTR & ELECT ENGN,SHEFFIELD S1 3JD,S YORKSHIRE,ENGLAND
UNIV SHEFFIELD,FAC SERC III-V SEMICONDUCTOR,DEPT ELECTR & ELECT ENGN,SHEFFIELD S1 3JD,S YORKSHIRE,ENGLAND
BEAUVAIS, J
MARSH, JH
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV SHEFFIELD,FAC SERC III-V SEMICONDUCTOR,DEPT ELECTR & ELECT ENGN,SHEFFIELD S1 3JD,S YORKSHIRE,ENGLAND
UNIV SHEFFIELD,FAC SERC III-V SEMICONDUCTOR,DEPT ELECTR & ELECT ENGN,SHEFFIELD S1 3JD,S YORKSHIRE,ENGLAND
MARSH, JH
KEAN, AH
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV SHEFFIELD,FAC SERC III-V SEMICONDUCTOR,DEPT ELECTR & ELECT ENGN,SHEFFIELD S1 3JD,S YORKSHIRE,ENGLAND
UNIV SHEFFIELD,FAC SERC III-V SEMICONDUCTOR,DEPT ELECTR & ELECT ENGN,SHEFFIELD S1 3JD,S YORKSHIRE,ENGLAND
KEAN, AH
BRYCE, AC
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV SHEFFIELD,FAC SERC III-V SEMICONDUCTOR,DEPT ELECTR & ELECT ENGN,SHEFFIELD S1 3JD,S YORKSHIRE,ENGLAND
UNIV SHEFFIELD,FAC SERC III-V SEMICONDUCTOR,DEPT ELECTR & ELECT ENGN,SHEFFIELD S1 3JD,S YORKSHIRE,ENGLAND
BRYCE, AC
BUTTON, C
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV SHEFFIELD,FAC SERC III-V SEMICONDUCTOR,DEPT ELECTR & ELECT ENGN,SHEFFIELD S1 3JD,S YORKSHIRE,ENGLAND
UNIV SHEFFIELD,FAC SERC III-V SEMICONDUCTOR,DEPT ELECTR & ELECT ENGN,SHEFFIELD S1 3JD,S YORKSHIRE,ENGLAND
BUTTON, C
[J].
ELECTRONICS LETTERS,
1992,
28
(17)
: 1670
-
1672
[3]
CASEY HC, 1978, HETEROSTRUCTURE LASE, P189
[4]
SPATIALLY SELECTIVE MODIFICATION OF GAAS/ALGAAS QUANTUM WELLS BY SIO2 CAPPING AND RAPID THERMAL ANNEALING
CHI, JY
论文数:
0
引用数:
0
h-index:
0
机构:
BRANDEIS UNIV,MARTIN FISHER SCH PHYS,WALTHAM,MA 02254
BRANDEIS UNIV,MARTIN FISHER SCH PHYS,WALTHAM,MA 02254
CHI, JY
WEN, X
论文数:
0
引用数:
0
h-index:
0
机构:
BRANDEIS UNIV,MARTIN FISHER SCH PHYS,WALTHAM,MA 02254
BRANDEIS UNIV,MARTIN FISHER SCH PHYS,WALTHAM,MA 02254
WEN, X
KOTELES, ES
论文数:
0
引用数:
0
h-index:
0
机构:
BRANDEIS UNIV,MARTIN FISHER SCH PHYS,WALTHAM,MA 02254
BRANDEIS UNIV,MARTIN FISHER SCH PHYS,WALTHAM,MA 02254
KOTELES, ES
ELMAN, B
论文数:
0
引用数:
0
h-index:
0
机构:
BRANDEIS UNIV,MARTIN FISHER SCH PHYS,WALTHAM,MA 02254
BRANDEIS UNIV,MARTIN FISHER SCH PHYS,WALTHAM,MA 02254
ELMAN, B
[J].
APPLIED PHYSICS LETTERS,
1989,
55
(09)
: 855
-
857
[5]
ENHANCED DISORDERING OF GAAS/ALGAAS MULTIPLE-QUANTUM-WELL BY RAPID THERMAL ANNEALING USING PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITED SIN CAPPING LAYER GROWN AT HIGH RF POWER CONDITION
CHOI, WJ
论文数:
0
引用数:
0
h-index:
0
机构:
KOREA INST SCI & TECHNOL,SEMICOND MAT LAB,SEOUL 130650,SOUTH KOREA
CHOI, WJ
LEE, JI
论文数:
0
引用数:
0
h-index:
0
机构:
KOREA INST SCI & TECHNOL,SEMICOND MAT LAB,SEOUL 130650,SOUTH KOREA
LEE, JI
HAN, IK
论文数:
0
引用数:
0
h-index:
0
机构:
KOREA INST SCI & TECHNOL,SEMICOND MAT LAB,SEOUL 130650,SOUTH KOREA
HAN, IK
KANG, KN
论文数:
0
引用数:
0
h-index:
0
机构:
KOREA INST SCI & TECHNOL,SEMICOND MAT LAB,SEOUL 130650,SOUTH KOREA
KANG, KN
KIM, Y
论文数:
0
引用数:
0
h-index:
0
机构:
KOREA INST SCI & TECHNOL,SEMICOND MAT LAB,SEOUL 130650,SOUTH KOREA
KIM, Y
PARK, HL
论文数:
0
引用数:
0
h-index:
0
机构:
KOREA INST SCI & TECHNOL,SEMICOND MAT LAB,SEOUL 130650,SOUTH KOREA
PARK, HL
CHO, K
论文数:
0
引用数:
0
h-index:
0
机构:
KOREA INST SCI & TECHNOL,SEMICOND MAT LAB,SEOUL 130650,SOUTH KOREA
CHO, K
[J].
JOURNAL OF MATERIALS SCIENCE LETTERS,
1994,
13
(05)
: 326
-
328
[6]
CHOI WJ, UNPUB JPN J APPLIE 2
[7]
IMPURITY-INDUCED DISORDER-DELINEATED OPTICAL WAVE-GUIDES IN GAAS-ALGAAS SUPERLATTICES
JULIEN, F
论文数:
0
引用数:
0
h-index:
0
JULIEN, F
SWANSON, PD
论文数:
0
引用数:
0
h-index:
0
SWANSON, PD
EMANUEL, MA
论文数:
0
引用数:
0
h-index:
0
EMANUEL, MA
DEPPE, DG
论文数:
0
引用数:
0
h-index:
0
DEPPE, DG
DETEMPLE, TA
论文数:
0
引用数:
0
h-index:
0
DETEMPLE, TA
COLEMAN, JJ
论文数:
0
引用数:
0
h-index:
0
COLEMAN, JJ
HOLONYAK, N
论文数:
0
引用数:
0
h-index:
0
HOLONYAK, N
[J].
APPLIED PHYSICS LETTERS,
1987,
50
(14)
: 866
-
868
[8]
CHARACTERIZATION OF GA OUT-DIFFUSION FROM GAAS INTO SIOXNY FILMS DURING THERMAL ANNEALING
KUZUHARA, M
论文数:
0
引用数:
0
h-index:
0
机构:
NEC CORP LTD,OPTOELECTR RES LABS,MIYAMAE KU,KAWASAKI,KANAGAWA 213,JAPAN
KUZUHARA, M
NOZAKI, T
论文数:
0
引用数:
0
h-index:
0
机构:
NEC CORP LTD,OPTOELECTR RES LABS,MIYAMAE KU,KAWASAKI,KANAGAWA 213,JAPAN
NOZAKI, T
KAMEJIMA, T
论文数:
0
引用数:
0
h-index:
0
机构:
NEC CORP LTD,OPTOELECTR RES LABS,MIYAMAE KU,KAWASAKI,KANAGAWA 213,JAPAN
KAMEJIMA, T
[J].
JOURNAL OF APPLIED PHYSICS,
1989,
66
(12)
: 5833
-
5836
[9]
DISORDERING OF GAAS ALGAAS MULTIPLE QUANTUM WELL STRUCTURES BY THERMAL ANNEALING FOR MONOLITHIC INTEGRATION OF LASER AND PHASE MODULATOR
RIBOT, H
论文数:
0
引用数:
0
h-index:
0
RIBOT, H
LEE, KW
论文数:
0
引用数:
0
h-index:
0
LEE, KW
SIMES, RJ
论文数:
0
引用数:
0
h-index:
0
SIMES, RJ
YAN, RH
论文数:
0
引用数:
0
h-index:
0
YAN, RH
COLDREN, LA
论文数:
0
引用数:
0
h-index:
0
COLDREN, LA
[J].
APPLIED PHYSICS LETTERS,
1989,
55
(07)
: 672
-
674
[10]
LORENTZ-LORENZ CORRELATION FOR REACTIVELY PLASMA DEPOSITED SI-N FILMS
SINHA, AK
论文数:
0
引用数:
0
h-index:
0
SINHA, AK
LUGUJJO, E
论文数:
0
引用数:
0
h-index:
0
LUGUJJO, E
[J].
APPLIED PHYSICS LETTERS,
1978,
32
(04)
: 245
-
246
←
1
2
→
共 13 条
[1]
COMPOSITIONAL DISORDERING OF GAAS/ALGAAS MULTIPLE QUANTUM WELLS USING ION-BOMBARDMENT AT ELEVATED-TEMPERATURES
ANDERSON, KK
论文数:
0
引用数:
0
h-index:
0
机构:
MIT,DEPT ELECT ENGN & COMP SCI,CAMBRIDGE,MA 02139
ANDERSON, KK
DONNELLY, JP
论文数:
0
引用数:
0
h-index:
0
机构:
MIT,DEPT ELECT ENGN & COMP SCI,CAMBRIDGE,MA 02139
DONNELLY, JP
WANG, CA
论文数:
0
引用数:
0
h-index:
0
机构:
MIT,DEPT ELECT ENGN & COMP SCI,CAMBRIDGE,MA 02139
WANG, CA
WOODHOUSE, JD
论文数:
0
引用数:
0
h-index:
0
机构:
MIT,DEPT ELECT ENGN & COMP SCI,CAMBRIDGE,MA 02139
WOODHOUSE, JD
HAUS, HA
论文数:
0
引用数:
0
h-index:
0
机构:
MIT,DEPT ELECT ENGN & COMP SCI,CAMBRIDGE,MA 02139
HAUS, HA
[J].
APPLIED PHYSICS LETTERS,
1988,
53
(17)
: 1632
-
1634
[2]
SUPPRESSION OF BANDGAP SHIFTS IN GAAS/ALGAAS QUANTUM-WELLS USING STRONTIUM FLUORIDE CAPS
BEAUVAIS, J
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV SHEFFIELD,FAC SERC III-V SEMICONDUCTOR,DEPT ELECTR & ELECT ENGN,SHEFFIELD S1 3JD,S YORKSHIRE,ENGLAND
UNIV SHEFFIELD,FAC SERC III-V SEMICONDUCTOR,DEPT ELECTR & ELECT ENGN,SHEFFIELD S1 3JD,S YORKSHIRE,ENGLAND
BEAUVAIS, J
MARSH, JH
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV SHEFFIELD,FAC SERC III-V SEMICONDUCTOR,DEPT ELECTR & ELECT ENGN,SHEFFIELD S1 3JD,S YORKSHIRE,ENGLAND
UNIV SHEFFIELD,FAC SERC III-V SEMICONDUCTOR,DEPT ELECTR & ELECT ENGN,SHEFFIELD S1 3JD,S YORKSHIRE,ENGLAND
MARSH, JH
KEAN, AH
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV SHEFFIELD,FAC SERC III-V SEMICONDUCTOR,DEPT ELECTR & ELECT ENGN,SHEFFIELD S1 3JD,S YORKSHIRE,ENGLAND
UNIV SHEFFIELD,FAC SERC III-V SEMICONDUCTOR,DEPT ELECTR & ELECT ENGN,SHEFFIELD S1 3JD,S YORKSHIRE,ENGLAND
KEAN, AH
BRYCE, AC
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV SHEFFIELD,FAC SERC III-V SEMICONDUCTOR,DEPT ELECTR & ELECT ENGN,SHEFFIELD S1 3JD,S YORKSHIRE,ENGLAND
UNIV SHEFFIELD,FAC SERC III-V SEMICONDUCTOR,DEPT ELECTR & ELECT ENGN,SHEFFIELD S1 3JD,S YORKSHIRE,ENGLAND
BRYCE, AC
BUTTON, C
论文数:
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引用数:
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h-index:
0
机构:
UNIV SHEFFIELD,FAC SERC III-V SEMICONDUCTOR,DEPT ELECTR & ELECT ENGN,SHEFFIELD S1 3JD,S YORKSHIRE,ENGLAND
UNIV SHEFFIELD,FAC SERC III-V SEMICONDUCTOR,DEPT ELECTR & ELECT ENGN,SHEFFIELD S1 3JD,S YORKSHIRE,ENGLAND
BUTTON, C
[J].
ELECTRONICS LETTERS,
1992,
28
(17)
: 1670
-
1672
[3]
CASEY HC, 1978, HETEROSTRUCTURE LASE, P189
[4]
SPATIALLY SELECTIVE MODIFICATION OF GAAS/ALGAAS QUANTUM WELLS BY SIO2 CAPPING AND RAPID THERMAL ANNEALING
CHI, JY
论文数:
0
引用数:
0
h-index:
0
机构:
BRANDEIS UNIV,MARTIN FISHER SCH PHYS,WALTHAM,MA 02254
BRANDEIS UNIV,MARTIN FISHER SCH PHYS,WALTHAM,MA 02254
CHI, JY
WEN, X
论文数:
0
引用数:
0
h-index:
0
机构:
BRANDEIS UNIV,MARTIN FISHER SCH PHYS,WALTHAM,MA 02254
BRANDEIS UNIV,MARTIN FISHER SCH PHYS,WALTHAM,MA 02254
WEN, X
KOTELES, ES
论文数:
0
引用数:
0
h-index:
0
机构:
BRANDEIS UNIV,MARTIN FISHER SCH PHYS,WALTHAM,MA 02254
BRANDEIS UNIV,MARTIN FISHER SCH PHYS,WALTHAM,MA 02254
KOTELES, ES
ELMAN, B
论文数:
0
引用数:
0
h-index:
0
机构:
BRANDEIS UNIV,MARTIN FISHER SCH PHYS,WALTHAM,MA 02254
BRANDEIS UNIV,MARTIN FISHER SCH PHYS,WALTHAM,MA 02254
ELMAN, B
[J].
APPLIED PHYSICS LETTERS,
1989,
55
(09)
: 855
-
857
[5]
ENHANCED DISORDERING OF GAAS/ALGAAS MULTIPLE-QUANTUM-WELL BY RAPID THERMAL ANNEALING USING PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITED SIN CAPPING LAYER GROWN AT HIGH RF POWER CONDITION
CHOI, WJ
论文数:
0
引用数:
0
h-index:
0
机构:
KOREA INST SCI & TECHNOL,SEMICOND MAT LAB,SEOUL 130650,SOUTH KOREA
CHOI, WJ
LEE, JI
论文数:
0
引用数:
0
h-index:
0
机构:
KOREA INST SCI & TECHNOL,SEMICOND MAT LAB,SEOUL 130650,SOUTH KOREA
LEE, JI
HAN, IK
论文数:
0
引用数:
0
h-index:
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机构:
KOREA INST SCI & TECHNOL,SEMICOND MAT LAB,SEOUL 130650,SOUTH KOREA
HAN, IK
KANG, KN
论文数:
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引用数:
0
h-index:
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机构:
KOREA INST SCI & TECHNOL,SEMICOND MAT LAB,SEOUL 130650,SOUTH KOREA
KANG, KN
KIM, Y
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引用数:
0
h-index:
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机构:
KOREA INST SCI & TECHNOL,SEMICOND MAT LAB,SEOUL 130650,SOUTH KOREA
KIM, Y
PARK, HL
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引用数:
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h-index:
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机构:
KOREA INST SCI & TECHNOL,SEMICOND MAT LAB,SEOUL 130650,SOUTH KOREA
PARK, HL
CHO, K
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引用数:
0
h-index:
0
机构:
KOREA INST SCI & TECHNOL,SEMICOND MAT LAB,SEOUL 130650,SOUTH KOREA
CHO, K
[J].
JOURNAL OF MATERIALS SCIENCE LETTERS,
1994,
13
(05)
: 326
-
328
[6]
CHOI WJ, UNPUB JPN J APPLIE 2
[7]
IMPURITY-INDUCED DISORDER-DELINEATED OPTICAL WAVE-GUIDES IN GAAS-ALGAAS SUPERLATTICES
JULIEN, F
论文数:
0
引用数:
0
h-index:
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JULIEN, F
SWANSON, PD
论文数:
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引用数:
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SWANSON, PD
EMANUEL, MA
论文数:
0
引用数:
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EMANUEL, MA
DEPPE, DG
论文数:
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引用数:
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DEPPE, DG
DETEMPLE, TA
论文数:
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引用数:
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DETEMPLE, TA
COLEMAN, JJ
论文数:
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引用数:
0
h-index:
0
COLEMAN, JJ
HOLONYAK, N
论文数:
0
引用数:
0
h-index:
0
HOLONYAK, N
[J].
APPLIED PHYSICS LETTERS,
1987,
50
(14)
: 866
-
868
[8]
CHARACTERIZATION OF GA OUT-DIFFUSION FROM GAAS INTO SIOXNY FILMS DURING THERMAL ANNEALING
KUZUHARA, M
论文数:
0
引用数:
0
h-index:
0
机构:
NEC CORP LTD,OPTOELECTR RES LABS,MIYAMAE KU,KAWASAKI,KANAGAWA 213,JAPAN
KUZUHARA, M
NOZAKI, T
论文数:
0
引用数:
0
h-index:
0
机构:
NEC CORP LTD,OPTOELECTR RES LABS,MIYAMAE KU,KAWASAKI,KANAGAWA 213,JAPAN
NOZAKI, T
KAMEJIMA, T
论文数:
0
引用数:
0
h-index:
0
机构:
NEC CORP LTD,OPTOELECTR RES LABS,MIYAMAE KU,KAWASAKI,KANAGAWA 213,JAPAN
KAMEJIMA, T
[J].
JOURNAL OF APPLIED PHYSICS,
1989,
66
(12)
: 5833
-
5836
[9]
DISORDERING OF GAAS ALGAAS MULTIPLE QUANTUM WELL STRUCTURES BY THERMAL ANNEALING FOR MONOLITHIC INTEGRATION OF LASER AND PHASE MODULATOR
RIBOT, H
论文数:
0
引用数:
0
h-index:
0
RIBOT, H
LEE, KW
论文数:
0
引用数:
0
h-index:
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LEE, KW
SIMES, RJ
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0
引用数:
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YAN, RH
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0
h-index:
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