OSCILLATIONS IN COMPENSATED P-TYPE INSB

被引：0

作者：

GIGIBERI.PG ^{[1
]}

KARTSIVA.GA ^{[1
]}

KEVANISH.GV ^{[1
]}

MIRIANAS.SM ^{[1
]}

NANOBASH.DI ^{[1
]}

机构：

[1] TBILISI STATE UNIV, TIBILISI, GEORGIA

来源：

SOVIET PHYSICS SEMICONDUCTORS-USSR | 1974年 / 7卷 / 08期

关键词：

D O I：

暂无

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：1102 / 1103

页数：2

共 50 条

[31] P-N JUNCTIONS BASED ON P-TYPE INSB
GALAVANOV, VV
ZIYAKHANOV, U
NASLEDOV, DN
SOVIET PHYSICS-SOLID STATE, 1964, 5 (10): : 2233 - 2234
[32] GENERATION-RECOMBINATION NOISE IN P-TYPE INSB
KLAASSEN, FM
DEHOOG, FJ
BLOK, J
PHYSICA, 1961, 27 (02): : 185 - &
[33] CHARACTERISTICS OF MOS CAPACITORS FORMED ON P-TYPE INSB
KORWINPAWLOWSKI, ML
HEASELL, EL
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1974, 24 (02): : 649 - 652
[34] QUANTUM EFFECTS IN CYCLOTRON RESONANCE IN P-TYPE INSB
BUTTON, KJ
LAX, B
BRADLEY, CC
PHYSICAL REVIEW LETTERS, 1968, 21 (06) : 350 - +
[35] NEGATIVE MAGNETORESISTANCE OF THIN P-TYPE INSB FILMS
KECHIEV, MM
FILATOV, ON
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1973, 6 (10): : 1689 - 1691
[36] NEGATIVE PHOTOCONDUCTIVITY OF P-TYPE INSB AT LOW TEMPERATURES
ISMAILOV, I
NASLEDOV, DN
SIPOVSKA.MA
SMETANNI.YS
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1970, 3 (09): : 1154 - &
[37] THE PHOTOMAGNETIC EFFECT IN P-TYPE INSB AT ROOM TEMPERATURE
ZOLOTAREV, VF
NASLEDOV, DN
SOVIET PHYSICS-SOLID STATE, 1962, 3 (11): : 2400 - 2404
[38] GENERATION-RECOMBINATION NOISE IN P-TYPE INSB
KAZANTSEV, GA
ROZHDEST.VV
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1967, 1 (05): : 550 - +
[39] CYCLOTRON RESONANCE OF HOT ELECTRONS IN P-TYPE INSB
GERSHENZON, EM
KULEVICH, EI
SEREBRYA.NA
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1971, 5 (01): : 137 - +
[40] MECHANISM OF FUNDAMENTAL ABSORPTION OF LIGHT IN P-TYPE INSB
KURIK, MV
SHEVCHUK, OS
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1972, 5 (12): : 2078 - &