ORIENTATION OF MGO THIN-FILMS ON SI(100) AND GAAS(100) PREPARED BY ELECTRON-BEAM EVAPORATION

被引：41

作者：

MASUDA, A ^{[1
]}

NASHIMOTO, K ^{[1
]}

机构：

[1] FUJI XEROX CO LTD,MAT RES LAB,1600 TAKEMATSU,MINAMIASHIGARA,KANAGAWA 25001,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1994年 / 33卷 / 6A期

关键词：

MGO THIN FILMS; ELECTRON-BEAM EVAPORATION; SI(100); GAAS(100); ORIENTATION; DEPOSITION RATE; SUBSTRATE TEMPERATURE;

D O I：

10.1143/JJAP.33.L793

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

MgO thin films were prepared on Si(100) and GaAs(100) by electron-beam evaporation. MgO thin films with (100) orientation were obtained at 610-degrees-C with the deposition rate of 0.5 angstrom/s, and those with (111) orientation were obtained below 440-degrees-C with deposition rate higher than 8 angstrom/s, on Si substrates. (100) oriented MgO thin films, however. grew on Si at 440-degrees-C upon decreasing the deposition rate to 0.3 angstrom/s. MgO thin films with (100) orientation having cube-on-cube epitaxy were obtained on GaAs substrates at the temperature as low as 280-degrees-C even at the deposition rate of 1.4 angstrom/s.

引用

页码：L793 / L796

页数：4

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