EFFECTS OF ELECTRON-BOMBARDMENT ON NOISE IN JUNCTION GATE FIELD-EFFECT TRANSISTORS

被引：3
|
作者：
KRISHNAN, IN [1 ]
CHEN, TM [1 ]
机构：
[1] UNIV S FLORIDA,DEPT ELECT & ELECTR SYST,TAMPA,FL 33620
来源：
SOLID-STATE ELECTRONICS | 1973年 / 16卷 / 11期
关键词：
D O I：
10.1016/0038-1101(73)90078-6
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：1233 / 1240
页数：8
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