REVIEW OF RIE INDUCED RADIATION-DAMAGE IN SILICON DIOXIDE

被引：0
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作者：
EPHRATH, LM
DIMARIA, DJ
机构：
来源：
SOLID STATE TECHNOLOGY | 1981年 / 24卷 / 04期
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TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
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页码：182 / 188
页数：7
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