WEDGE-SHAPED FIELD EMITTER ARRAYS FOR FLAT DISPLAY

被引：4
|
作者：
KANEKO, A [1 ]
KANNO, T [1 ]
TOMII, K [1 ]
KITAGAWA, M [1 ]
HIRAO, T [1 ]
机构：
[1] MATSUSHITA ELECT IND CO LTD,CENT RES LABS,MORIGUCHI,OSAKA 570,JAPAN
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1991年 / 38卷 / 10期
关键词：
D O I：
10.1109/16.88533
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We fabricated wedge-shaped field emitter arrays. The emitter and the gate electrode have a wedge shape in the plane and are placed meeting each other with a gap of about 1-mu-m. The emitter is formed by a 500-nm-thick Mo film deposited on an Al stripe electrode layer and the gate electrode is a 200-nm-thick Cr film on a SiO2 layer with a thickness nearly the same as that of the Mo film. The electron emission began at about 50 V which is markedly lower than in other types of field emitters and the emission current obtained was 12-mu-A at 85 V.
引用
收藏
页码：2395 / 2397
页数：3
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