WEDGE-SHAPED FIELD EMITTER ARRAYS FOR FLAT DISPLAY

被引：4

作者：

KANEKO, A ^{[1
]}

KANNO, T ^{[1
]}

TOMII, K ^{[1
]}

KITAGAWA, M ^{[1
]}

HIRAO, T ^{[1
]}

机构：

[1] MATSUSHITA ELECT IND CO LTD,CENT RES LABS,MORIGUCHI,OSAKA 570,JAPAN

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1991年 / 38卷 / 10期

关键词：

D O I：

10.1109/16.88533

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We fabricated wedge-shaped field emitter arrays. The emitter and the gate electrode have a wedge shape in the plane and are placed meeting each other with a gap of about 1-mu-m. The emitter is formed by a 500-nm-thick Mo film deposited on an Al stripe electrode layer and the gate electrode is a 200-nm-thick Cr film on a SiO2 layer with a thickness nearly the same as that of the Mo film. The electron emission began at about 50 V which is markedly lower than in other types of field emitters and the emission current obtained was 12-mu-A at 85 V.

引用

页码：2395 / 2397

页数：3

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