DEPENDENCE OF THE WIDTH OF A DELTA-IMPURITY LAYER ON POSITION IN AN INXGA1-XAS/GAAS STRAINED QUANTUM-WELL

被引：0
|
作者：
NOTARI, AC
SCHRAPPE, B
BASMAJI, P
HIPOLITO, O
机构：
[1] Instituto de Físíca e Química de São Carlos, Universidade de Sao Paulo
来源：
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1991年 / 126卷 / 02期
关键词：
D O I：
10.1002/pssa.2211260233
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
[No abstract available]
引用
收藏
页码：K119 / K122
页数：4
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