DEPENDENCE OF THE WIDTH OF A DELTA-IMPURITY LAYER ON POSITION IN AN INXGA1-XAS/GAAS STRAINED QUANTUM-WELL

被引：0
|
作者：
NOTARI, AC
SCHRAPPE, B
BASMAJI, P
HIPOLITO, O
机构：
[1] Instituto de Físíca e Química de São Carlos, Universidade de Sao Paulo
来源：
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1991年 / 126卷 / 02期
关键词：
D O I：
10.1002/pssa.2211260233
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
[No abstract available]
引用
收藏
页码：K119 / K122
页数：4
相关论文
共 50 条
  • [1] Dependence of the width of a δ-impurity layer on position in an InxGa1-xAs/GaAs strained quantum well
    Notari, A.C.
    Schrappe, B.
    Basmaji, P.
    Hipolito, O.
    Physica Status Solidi (A) Applied Research, 1991, 126 (02):
  • [2] PHOTOTRANSMISSION STUDY OF STRAINED-LAYER INXGA1-XAS/GAAS SINGLE QUANTUM-WELL STRUCTURES
    YUAN, S
    WANG, SM
    QIAN, SX
    LI, YF
    ANDERSSON, TG
    CHEN, ZG
    JOURNAL OF APPLIED PHYSICS, 1990, 68 (10) : 5388 - 5390
  • [3] THE STUDY OF MISFIT DISLOCATIONS IN INXGA1-XAS/GAAS STRAINED QUANTUM-WELL STRUCTURES
    WANG, JN
    STEEDS, JW
    WOOLF, DA
    PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS AND MECHANICAL PROPERTIES, 1992, 65 (04): : 829 - 839
  • [4] TEMPERATURE-DEPENDENCE OF THE PHOTOLUMINESCENCE OF INXGA1-XAS/GAAS QUANTUM-WELL STRUCTURES
    KARACHEVTSEVA, MV
    IGNATEV, AS
    MOKEROV, VG
    NEMTSEV, GZ
    STRAKHOV, VA
    YAREMENKO, NG
    SEMICONDUCTORS, 1994, 28 (07) : 691 - 694
  • [5] Generic degradation mechanism for 980 nm InxGa1-xAs/GaAs strained quantum-well lasers
    Chu, SNG
    Chand, N
    Joyce, WB
    Parayanthal, P
    Wilt, DP
    APPLIED PHYSICS LETTERS, 2001, 78 (21) : 3166 - 3168
  • [6] INVESTIGATION OF INXGA1-XAS/GAAS STRAINED QUANTUM-WELL STRUCTURES GROWN ON NONPLANAR SUBSTRATES BY MOCVD
    GRODZINSKI, P
    ZOU, Y
    OSINSKI, JS
    DAPKUS, PD
    JOURNAL OF CRYSTAL GROWTH, 1991, 107 (1-4) : 583 - 590
  • [7] OPTICAL STUDIES OF INXGA1-XAS/GAAS STRAINED-LAYER QUANTUM WELLS
    HUANG, KF
    TAI, K
    CHU, SNG
    CHO, AY
    APPLIED PHYSICS LETTERS, 1989, 54 (20) : 2026 - 2028
  • [8] EXCITONIC TRANSITIONS IN STRAINED-LAYER INXGA1-XAS/GAAS QUANTUM WELLS
    GERSHONI, D
    VANDENBERG, JM
    CHU, SNG
    TEMKIN, H
    TANBUNEK, T
    LOGAN, RA
    PHYSICAL REVIEW B, 1989, 40 (14): : 10017 - 10020
  • [9] Disorder effects in GaAs/InxGa1-xAs/GaAs quantum well delta doped with Mn
    Aronzon, B.
    Lagutin, A.
    Rylkov, V.
    Pankov, M.
    Lashkul, A.
    Laiho, R.
    PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 5, NO 3, 2008, 5 (03): : 814 - +
  • [10] CALCULATION OF THE EXCITON PARAMETERS IN STRESSED QUANTUM-WELL INXGA1-XAS/GAAS STRUCTURES
    AVRUTSKII, IA
    SYCHUGOV, VA
    USIEVICH, BA
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1991, 25 (10): : 1074 - 1077
12345