METAL PRECIPITATES IN SILICON P-N JUNCTIONS

被引:281
作者
GOETZBERGER, A
SHOCKLEY, W
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D O I
10.1063/1.1735455
中图分类号
O59 [应用物理学];
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页码:1821 / 1824
页数:4
相关论文
共 9 条
[1]   QUENCHED-IN RECOMBINATION CENTERS IN SILICON [J].
BEMSKI, G .
PHYSICAL REVIEW, 1956, 103 (03) :567-569
[2]   COPPER PRECIPITATION ON DISLOCATIONS IN SILICON [J].
DASH, WC .
JOURNAL OF APPLIED PHYSICS, 1956, 27 (10) :1193-1195
[3]  
GOETZBERGER A, 1959, B AM PHYS SOC, V4, P409
[4]  
GOETZBERGER A, 1959, STRUCTURE PROPERTIES, P298
[5]  
GOETZBERGER A, 1960, B AM PHYS SOC, V5, P160
[6]  
HUGHES HE, 1957, IRE WESCON CONVENTIO, P80
[7]  
PELL EM, 1956, J APPL PHYS, V28, P459
[8]  
PLUMMER AR, 1958, J ELECTRON CONTR, V5, P405
[9]   DIFFUSION IN HOMOOPOLAREN HALBLEITERN [J].
SMITS, FM .
ERGEBNISSE DER EXAKTEN NATURWISSENSCHAFTEN, 1959, 31 :167-219