THERMAL-ANALYSIS OF P-N-JUNCTION SECOND BREAKDOWN INITIATION

被引:2
作者
MARS, P
机构
关键词
D O I
10.1080/00207217208938267
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:39 / &
相关论文
共 11 条
[1]   MEASUREMENT OF P-N JUNCTION SECOND BREAKDOWN CHARACTERISTICS [J].
BROWNE, VA ;
LEWIS, DG ;
MARS, P .
INTERNATIONAL JOURNAL OF ELECTRONICS, 1971, 31 (02) :127-+
[2]  
Carslaw H. S., 1959, CONDUCTION HEAT SOLI
[3]  
FORD GM, 1963, SOLID STATE DESIGN, V4, P29
[4]   SPREADING RESISTANCE IN CYLINDRICAL SEMICONDUCTOR DEVICES [J].
KENNEDY, DP .
JOURNAL OF APPLIED PHYSICS, 1960, 31 (08) :1490-1497
[5]   ANALYSIS OF TRANSISTOR SECOND BREAKDOWN [J].
MARS, P .
PROCEEDINGS OF THE INSTITUTION OF ELECTRICAL ENGINEERS-LONDON, 1969, 116 (08) :1345-+
[6]   SECONDARY BREAKDOWN IN TRANSISTORS [J].
MELCHIOR, H ;
STRUTT, MJ .
PROCEEDINGS OF THE IEEE, 1964, 52 (04) :439-&
[7]  
MORTENSEN RE, 1957, P I RADIO ENGRS, V45, P504
[8]   SECOND BREAKDOWN IN FORWARD AND REVERSE BASE CURRENT REGION [J].
NIENHUIS, RJ .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (8-9) :655-&
[9]  
STRICKLAND PR, 1961, IBM J RES DEV, V3, P1490
[10]  
SZE SM, 1969, PHYSICS SEMICONDUCTO