PRECISE COMPUTER CONTROL OF THE MBE PROCESS - APPLICATION TO GRADED INGAALAS/INP ALLOYS

被引：10

作者：

VLCEK, JC ^{[1
]}

FONSTAD, CG ^{[1
]}

机构：

[1] MIT,ELECTR RES LAB,CAMBRIDGE,MA 02139

来源：

JOURNAL OF CRYSTAL GROWTH | 1991年 / 111卷 / 1-4期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1016/0022-0248(91)90946-3

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

We report MBE growth techniques for the precise control of composition in both graded and uniform composition InGaAlAs alloys. Flux modulation through precise control of the effusion cell setpoint temperatures, including corrections for thermal transient effects, is used to achieve graded alloy compositions as well as to maintain a uniform composition in the presence of disturbances such as shutter operations.

引用

页码：56 / 60

页数：5