REACHING THE LIMITS IN SILICON PROCESSING

被引：1
|
作者：
BENSON, KE
KIMERLING, LC
PANOUSIS, PT
机构：
[1] AT&T BELL LABS,MAT PHYS RES DEPT,MURRAY HILL,NJ 07974
[2] AT&T BELL LABS,VLSI TECHNOL LAB,ALLENTOWN,PA 18103
来源：
AT&T TECHNICAL JOURNAL | 1990年 / 69卷 / 06期
关键词：
D O I：
10.1002/j.1538-7305.1990.tb00484.x
中图分类号：
TP3 [计算技术、计算机技术];
学科分类号：
0812 ;
摘要：
The trend in silicon device fabrication of employing increasing numbers of more complex processes to produce materials systems with narrower tolerances of performance has produced encounters with some fundamental limits of materials processing. This paper examines the role of materials processing in defining the ultimate limits in feature size, compositional and structural heterogeneity, and device performance.
引用
收藏
页码：16 / 31
页数：16
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