SUBHALF MICRON ISOLATION METHOD WITH SELF-ALIGNED CHANNEL STOPPER

被引：0

作者：

WAKAMIYA, W

OHNO, Y

KIMURA, H

SATOH, S

机构：

[1] LSI R, D Laboratory, Mitsubishi Electric Corp. 4-1 Mizuhara, Itami, Hyogo

来源：

MICROELECTRONIC ENGINEERING | 1991年 / 15卷 / 1-4期

关键词：

D O I：

10.1016/0167-9317(91)90300-3

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, described is a new simple isolation method utilized for realizing sub-half micron devices. Substantially, this isolation method is a dielectric isolation, of which field oxide is the CVD-oxide instead of the thermal oxide with self-aligned chan-stop region.

引用

页码：639 / 642

页数：4

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