ELECTRICAL-RESISTANCE AND DEFECT STRUCTURE OF STABLE AND METASTABLE PHASES OF THE SYSTEM NB12O29-NB2O5 BETWEEN 800-DEGREES-C AND 1100-DEGREES-C

被引：27
作者：
MARUCCO, JF
机构：
[1] Laboratoire des Composés Non-Stoechiométriques, Bâtiment 415, Université de Paris-Sud 91405, Orsay Cedex
来源：
JOURNAL OF CHEMICAL PHYSICS | 1979年 / 70卷 / 02期
关键词：
D O I：
10.1063/1.437545
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
The defect structure of oxides of the system Nb12O 29-Nb2O5 have been studied by thermogravimetry and electrical resistance measurements. It has been clearly established that the stable oxides Nb2O5-x, Nb25O62-x, and Nb12O29-x are related to oxygen vacancies. On the other hand, the metastable phase of reduction of Nb2O5-x may be related to interstitial trivalent cations and it is suggested that such a defect of structure may be a step before the formation of crystallographic shear planes. In that case, the electric conductivity has been found to resemble a hopping process. © 1979 American Institute of Physics.
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页码：649 / 654
页数：6
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