MBE GROWTH OF ALGAAS/NIAL/ALGAAS HETEROSTRUCTURES - A NOVEL EPITAXIAL III-V SEMICONDUCTOR METAL SYSTEM

被引：4
|
作者：
HARBISON, JP
SANDS, T
TABATABAIE, N
CHAN, WK
FLOREZ, LT
KERAMIDAS, VG
机构：
来源：
JOURNAL OF CRYSTAL GROWTH | 1989年 / 95卷 / 1-4期
关键词：
D O I：
10.1016/0022-0248(89)90434-X
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
引用
收藏
页码：425 / 426
页数：2
相关论文
共 50 条
  • [41] Spin polarized transport effects in III-V semiconductor heterostructures
    George, JM
    2005 International Conference on MEMS, NANO and Smart Systems, Proceedings, 2005, : 39 - 39
  • [42] Microwave modulated photoluminescence of excitons in III-V semiconductor heterostructures
    Inglefield, CE
    DeLong, MC
    Taylor, PC
    Harrison, WA
    PROCEEDINGS OF THE THIRD INTERNATIONAL CONFERENCE ON EXCITONIC PROCESSES IN CONDENSED MATTER - EXCON '98, 1998, 98 (25): : 531 - 536
  • [43] Growing III-V Semiconductor Heterostructures on SiC/Si Substrates
    Sharofidinov, Sh Sh
    Kukushkin, S. A.
    Red'kov, A., V
    Grashchenko, A. S.
    Osipov, A., V
    TECHNICAL PHYSICS LETTERS, 2019, 45 (07) : 711 - 713
  • [44] Band-to-band tunneling in III-V semiconductor heterostructures
    Van de Put, Maarten
    2013 IEEE EUROCON, 2013, : 2134 - 2139
  • [45] High-quality III-V semiconductor MBE growth on Ge/Si virtual substrates for metal-oxide-semiconductor device fabrication
    Choi, Donghun
    Harris, James S.
    Kim, Eunji
    McIntyre, Paul C.
    Cagnon, Joel
    Stemmer, Susanne
    JOURNAL OF CRYSTAL GROWTH, 2009, 311 (07) : 1962 - 1971
  • [46] Engineering a Robust Flat Band in III-V Semiconductor Heterostructures
    Vergel, Nathali A. Franchina
    Post, L. Christiaan
    Sciacca, Davide
    Berthe, Maxime
    Vaurette, Francois
    Lambert, Yannick
    Yarekha, Dmitri
    Troadec, David
    Coinon, Christophe
    Fleury, Guillaume
    Patriarche, Gilles
    Xu, Tao
    Desplanque, Ludovic
    Wallart, Xavier
    Vanmaekelbergh, Daniel
    Delerue, Christophe
    Grandidier, Bruno
    NANO LETTERS, 2021, 21 (01) : 680 - 685
  • [47] Study and Fabrication of III-V Compound Semiconductor Transistor using MBE
    Nikte, Omkar Sandeep
    2018 3RD INTERNATIONAL CONFERENCE FOR CONVERGENCE IN TECHNOLOGY (I2CT), 2018,
  • [48] Ion etching effects at interfaces of semiconductor III-V/III-V and II-VI/III-V heterostructures in SIMS depth profiling
    Konarski, P.
    Herman, M.A.
    Kozhukhov, A.V.
    Electron Technology (Warsaw), 1996, 29 (2-3): : 277 - 282
  • [49] II-VI SEMICONDUCTOR EPILAYERS GROWN BY MBE ON III-V SEMICONDUCTOR SUBSTRATES
    BOSACCHI, A
    FRANCHI, S
    ALLEGRI, P
    AVANZINI, V
    FRIGERI, C
    MATERIALS CHEMISTRY AND PHYSICS, 1983, 9 (1-3) : 179 - 187
  • [50] Metamorphic growth of III-V semiconductor bicrystals
    Richardson, C. J. K.
    He, L.
    Kanakaraju, S.
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2011, 29 (03):
12345