MBE GROWTH OF ALGAAS/NIAL/ALGAAS HETEROSTRUCTURES - A NOVEL EPITAXIAL III-V SEMICONDUCTOR METAL SYSTEM

被引：4
|
作者：
HARBISON, JP
SANDS, T
TABATABAIE, N
CHAN, WK
FLOREZ, LT
KERAMIDAS, VG
机构：
来源：
JOURNAL OF CRYSTAL GROWTH | 1989年 / 95卷 / 1-4期
关键词：
D O I：
10.1016/0022-0248(89)90434-X
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
引用
收藏
页码：425 / 426
页数：2
相关论文
共 50 条
  • [21] DECHANNELING BY MISFIT DISLOCATIONS IN III-V SEMICONDUCTOR HETEROSTRUCTURES
    MAZZER, M
    DRIGO, AV
    ROMANATO, F
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1992, 64 (1-4): : 103 - 107
  • [22] CHEMICAL BEAM EPITAXY OF III-V SEMICONDUCTOR HETEROSTRUCTURES
    TSANG, WT
    JOURNAL DE PHYSIQUE, 1987, 48 (C-5): : 13 - 19
  • [23] MECHANISMS OF STRAIN RELAXATION IN III-V SEMICONDUCTOR HETEROSTRUCTURES
    MAZZER, M
    ROMANATO, F
    DRIGO, AV
    CARNERA, A
    JOURNAL OF CRYSTAL GROWTH, 1993, 126 (01) : 125 - 132
  • [24] Anisotropy of strain relaxation in III-V semiconductor heterostructures
    Yastrubchak, O
    Wosinski, T
    Domagala, JZ
    Lusakowska, E
    DEFECTS AND DIFFUSION IN SEMICONDUCTORS - AN ANNUAL RETROSPECTIVE VII, 2004, 230 : 93 - 100
  • [25] A MICROSTRUCTURAL STUDY OF OVAL DEFECTS IN III-V SEMICONDUCTOR EPITAXIAL LAYERS GROWN BY MBE ON GAAS (001)
    ZHANG, X
    STATONBEVAN, AE
    INSTITUTE OF PHYSICS CONFERENCE SERIES, 1989, (100): : 211 - 216
  • [26] A MICROSTRUCTURAL STUDY OF OVAL DEFECTS IN III-V SEMICONDUCTOR EPITAXIAL LAYERS GROWN BY MBE ON GAAS (001)
    ZHANG, X
    STATONBEVAN, AE
    MICROSCOPY OF SEMICONDUCTING MATERIALS 1989, 1989, 100 : 211 - 216
  • [27] Epitaxial growth of crystal phase quantum dots in III-V semiconductor nanowires
    Lozano, Miguel Sinusia
    Gomez, Victor J.
    NANOSCALE ADVANCES, 2023, 5 (07): : 1890 - 1909
  • [28] INFLUENCE OF MBE GROWTH-CONDITIONS ON PERSISTENT PHOTOCONDUCTIVITY EFFECTS IN N-ALGAAS AND SELECTIVELY DOPED GAAS/ALGAAS HETEROSTRUCTURES
    ISHIKAWA, T
    KONDO, K
    HIYAMIZU, S
    SHIBATOMI, A
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1985, 24 (06): : L408 - L410
  • [29] III-V semiconductor vapour growth
    Platinum Metals Review, 1992, 36 (01)
  • [30] MBE growth and characterization of (100) and (631)-oriented modulation doped AlGaAs/GaAs heterostructures
    Mendez-Garcia, V. H.
    Gonzalez-Fernandez, J. V.
    Espinosa-Vega, L. I.
    Diaz, T.
    Romano, R.
    Rosendo, E.
    Gallardo, S.
    Vazquez-Cortes, D.
    Shimomura, S.
    JOURNAL OF CRYSTAL GROWTH, 2013, 378 : 88 - 91
12345