MBE GROWTH OF ALGAAS/NIAL/ALGAAS HETEROSTRUCTURES - A NOVEL EPITAXIAL III-V SEMICONDUCTOR METAL SYSTEM

被引：4
|
作者：
HARBISON, JP
SANDS, T
TABATABAIE, N
CHAN, WK
FLOREZ, LT
KERAMIDAS, VG
机构：
来源：
JOURNAL OF CRYSTAL GROWTH | 1989年 / 95卷 / 1-4期
关键词：
D O I：
10.1016/0022-0248(89)90434-X
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
引用
收藏
页码：425 / 426
页数：2
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