A NOVEL INGAASP INP DISTRIBUTED FEEDBACK LASER WITH A CONTACTED SURFACE GRATING FOR LAMBDA=1.55 MU-M

被引：0

|

作者：

RAST, A

机构：

来源：

AEU-ARCHIV FUR ELEKTRONIK UND UBERTRAGUNGSTECHNIK-INTERNATIONAL JOURNAL OF ELECTRONICS AND COMMUNICATIONS | 1989年 / 43卷 / 06期

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：388 / 389

页数：2

相关论文

共 50 条

[41] TUNABLE 2-SEGMENT DBR-LASER WITH CONTACTED SURFACE GRATING FOR THE 1.55-MU-M WAVELENGTH RANGE
MUHLHOFF, A
ZACH, A
RAST, A
AEU-ARCHIV FUR ELEKTRONIK UND UBERTRAGUNGSTECHNIK-INTERNATIONAL JOURNAL OF ELECTRONICS AND COMMUNICATIONS, 1993, 47 (03): : 190 - 193
[42] A 1.59 MU-M WAVELENGTH GAINASP INP DISTRIBUTED FEEDBACK LASER WITH 1ST-ORDER GRATING ON ANTI-MELTBACK LAYER
UCHIYAMA, S
IGA, K
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1983, 22 (06): : L348 - L349
[43] LOW THRESHOLD 1.55 MU-M INGAASP LASERS DOUBLE CLAD WITH INGAASP CONFINING LAYERS
WESTBROOK, LD
NELSON, AW
HATCH, CB
ELECTRONICS LETTERS, 1981, 17 (25-2) : 952 - 954
[44] WAVELENGTH DEPENDENCE OF CHARACTERISTICS OF 1.2-1.55 MU-M INGAASP/INP P-SUBSTRATE BURIED CRESCENT LASER-DIODES
KAKIMOTO, S
TAKEMOTO, A
SAKAKIBARA, Y
NAKAJIMA, Y
FUJIWARA, M
NAMIZAKI, H
HIGUCHI, H
YAMAMOTO, Y
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1988, 24 (01) : 29 - 35
[45] 1.55 MU-M INGAASP LOW-THRESHOLD BURIED-CRESCENT INJECTION-LASER
CHENG, WH
PERILLO, L
FOROUHAR, S
KIM, OK
JIANG, CL
SHEEM, SK
ELECTRONICS LETTERS, 1985, 21 (19) : 832 - 834
[46] LOW-RESISTANCE 1.55 MU-M INGAASP/INP SEMIINSULATING BURIED HETEROSTRUCTURE LASER-DIODES USING A MULTILAYER CONTACT STRUCTURE
MATSUMOTO, S
IGA, R
KADOTA, Y
YAMAMOTO, M
FUKUDA, M
KISHI, K
ITAYA, Y
ELECTRONICS LETTERS, 1995, 31 (11) : 882 - 883
[47] IMPROVEMENT IN DIFFERENTIAL QUANTUM EFFICIENCY OF 1.55 MU-M DISTRIBUTED FEEDBACK LASERS GROWN BY MOVPE
ITAYA, Y
FUKUDA, M
NOGUCHI, Y
NAKANO, Y
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1987, 26 (08): : L1289 - L1291
[48] SENSITIVE DETECTION OF AMMONIA ABSORPTION BY USING A 1.65 MU-M DISTRIBUTED-FEEDBACK INGAASP DIODE-LASER
CANCIO, P
CORSI, C
PAVONE, FS
MARTINELLI, RU
MENNA, RJ
INFRARED PHYSICS & TECHNOLOGY, 1995, 36 (06) : 987 - 993
[49] 1.5 MU-M INGAASP-INP DH LASER WITH OPTICAL-WAVEGUIDE STRUCTURE
KOBAYASHI, N
HORIKOSHI, Y
JAPANESE JOURNAL OF APPLIED PHYSICS, 1979, 18 (05) : 1005 - 1006
[50] ON SPOT SIZES OF 1.3-1.55-MU-M INGAASP/INP SEMICONDUCTOR-LASER DIODES
GHAFOORISHIRAZ, H
MICROWAVE AND OPTICAL TECHNOLOGY LETTERS, 1988, 1 (06) : 214 - 216

← 1 2 3 4 5 →