THE ROLE OF ALUMINUM IN SELECTIVE REACTIVE ION ETCHING OF GAAS ON ALGAAS

被引：24
作者：
SEAWARD, KL [1 ]
MOLL, NJ [1 ]
STICKLE, WF [1 ]
机构：
[1] PERKIN ELMER PHYS ELECTR LABS,MT VIEW,CA 94043
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1988年 / 6卷 / 06期
关键词：
D O I：
10.1116/1.584423
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：1645 / 1649
页数：5
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