ONSETS OF THE ELECTRON-HOLE-DROPLET LUMINESCENCE IN SI

被引：18

作者：

HAMMOND, RB

SILVER, RN

机构：

[1] Electronics and Theoretical Division, Los Alamos Scientific Laboratory, Los Alamos

来源：

PHYSICAL REVIEW LETTERS | 1979年 / 42卷 / 08期

关键词：

D O I：

10.1103/PhysRevLett.42.523

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We report measurements of the laser excitation thresholds for the onset of electron-hole-droplet luminescence in Si in the temperature range 2.5-19.3 K. The results are consistent with finite-lifetime nucleation theory. Fits to the data determine a surface tension 1.1×10-2 erg/cm2 and a sticking fraction 5%. © 1979 The American Physical Society.

引用

页码：523 / 526

页数：4

共 19 条

[1]

[Anonymous], [No title captured]

[2] HYSTERESIS EFFECT AND SURFACE-ENERGY OF DROPS IN SILICON [J].

COLLET, J ;

PUGNET, M ;

BARRAU, J ;

BROUSSEAU, M ;

MAAREF, H .

SOLID STATE COMMUNICATIONS, 1977, 24 (04) :335-338

[3]

Dite A. F., 1977, SOV PHYS JETP, V45, P604

[4] EFFECT OF SURFACE-ENERGY OF ELECTRON-HOLE DROPS ON THEIR LUMINESCENCE SPECTRUM IN GE [J].

ETIENNE, B ;

BENOITALAGUILLAUME, C ;

VOOS, M .

PHYSICAL REVIEW LETTERS, 1975, 35 (08) :536-539

[5] INVESTIGATIONS OF CONDENSATION PHENOMENA OF ELECTRON-HOLE DROPS IN PURE GE [J].

ETIENNE, B ;

BENOITALAGUILLAUME, C ;

VOOS, M .

PHYSICAL REVIEW B, 1976, 14 (02) :712-718

[6] TEMPERATURE-DEPENDENCE OF ELECTRON-HOLE-LIQUID LUMINESCENCE IN SI [J].

HAMMOND, RB ;

MCGILL, TC ;

MAYER, JW .

PHYSICAL REVIEW B, 1976, 13 (08) :3566-3575

[7]

HAMMOND RF, UNPUBLISHED

[8]

KALIA RK, 1977, B AM PHYS SOC, V22, P269

[9]

Pound G. M., 1972, Journal of Physical and Chemical Reference Data, V1, P119, DOI 10.1063/1.3253095

[10]

RICE TM, 1977, SOLID STATE PHYSICS, V32

← 1 2 →