A NEW FORMALISM FOR ELECTRON STATES AT SURFACES .2. APPLICATION TO SURFACE STATES

被引:28
作者
GARCIAMOLINER, F
HEINE, V
RUBIO, J
机构
[1] Instituto de Quimica Fisica 'Rocasolano', C.S.I.C., Madrid
来源
JOURNAL OF PHYSICS PART C SOLID STATE PHYSICS | 1969年 / 2卷 / 10期
关键词
D O I
10.1088/0022-3719/2/10/313
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
The formalism of the previous paper is applied to calculate surface states on two very simple models of a solid, in order to show the type of Green functions needed in practical applications of the theory. The first model is that of Shockley states in the gap of a nearly-free-electron band structure in one dimension. In the second model a band of surface states is split off from a single band in three dimensions.
引用
收藏
页码:1797 / +
页数:1
相关论文
共 15 条
[1]  
BLOUNT EI, 1962, SOLID ST PHYS, V13, P362
[2]   A NEW METHOD IN QUANTUM THEORY OF SURFACE STATES [J].
GARCIAMOLINER, F ;
RUBIO, J .
JOURNAL OF PHYSICS PART C SOLID STATE PHYSICS, 1969, 2 (10) :1789-+
[3]  
Goodwin ET, 1939, P CAMB PHILOS SOC, V35, P205
[4]   ON GENERAL THEORY OF SURFACE STATES AND SCATTERING OF ELECTRONS IN SOLIDS [J].
HEINE, V .
PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1963, 81 (520) :300-&
[5]   THEORY OF SURFACE STATES [J].
HEINE, V .
PHYSICAL REVIEW, 1965, 138 (6A) :1689-&
[6]   PHASE SHIFTS AND LOCAL CHARGE NEUTRALITY IN SEMICONDUCTORS [J].
HEINE, V .
PHYSICAL REVIEW, 1966, 145 (02) :593-&
[7]   DANGLING BONDS AND DISLOCATIONS IN SEMICONDUCTORS [J].
HEINE, V .
PHYSICAL REVIEW, 1966, 146 (02) :568-&
[8]   ELECTRONIC BAND STRUCTURE AND COVALENCY IN DIAMOND-TYPE SEMICONDUCTORS [J].
HEINE, V ;
JONES, RO .
JOURNAL OF PHYSICS PART C SOLID STATE PHYSICS, 1969, 2 (04) :719-&
[9]   SOME THEORY ABOUT SURFACE STATES [J].
HEINE, V .
SURFACE SCIENCE, 1964, 2 :1-7
[10]  
HEINE V, TO BE PUBLISHED