ULTRA-LOW REFLECTIVITY 1.5-MU-M SEMICONDUCTOR-LASER PREAMPLIFIER

被引：41

作者：

OLSSON, NA

OBERG, MG

TZENG, LD

CELLA, T

机构：

[1] INST MICROWAVE TECHNOL,S-16421 KISTA,SWEDEN

[2] AT&T BELL LABS,ALLENTOWN,PA 18103

来源：

ELECTRONICS LETTERS | 1988年 / 24卷 / 09期

关键词：

D O I：

10.1049/el:19880387

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：569 / 570

页数：2

共 9 条

[1] TRAVELING-WAVE OPTICAL AMPLIFIER AT 1.3-MU-M [J].

EISENSTEIN, G ;

JOHNSON, BC ;

RAYBON, G .

ELECTRONICS LETTERS, 1987, 23 (19) :1020-1022

[2] 10-GHZ OPTICAL RECEIVER USING A TRAVELING-WAVE SEMICONDUCTOR-LASER PREAMPLIFIER [J].

MARSHALL, IW ;

OMAHONY, MJ .

ELECTRONICS LETTERS, 1987, 23 (20) :1052-1053

[3] WAVELENGTH DEPENDENCE OF NOISE-FIGURE OF A TRAVELING-WAVE GAINASP-INP LASER-AMPLIFIER [J].

OBERG, MG ;

OLSSON, NA .

ELECTRONICS LETTERS, 1988, 24 (02) :99-100

[4] HIGH-SENSITIVITY DIRECT-DETECTION RECEIVER WITH A 1.5-MU-M OPTICAL PREAMPLIFIER [J].

OLSSON, NA ;

GARBINSKI, P .

ELECTRONICS LETTERS, 1986, 22 (21) :1114-1116

[5] WIDE-BAND 1-5-MU-M OPTICAL RECEIVER USING TRAVELING-WAVE LASER-AMPLIFIER [J].

OMAHONY, MJ ;

MARSHALL, IW ;

WESTLAKE, HJ ;

STALLARD, WG .

ELECTRONICS LETTERS, 1986, 22 (23) :1238-1240

[6] THEORETICAL-ANALYSIS AND FABRICATION OF ANTIREFLECTION COATINGS ON LASER-DIODE FACETS [J].

SAITOH, T ;

MUKAI, T ;

MIKAMI, O .

JOURNAL OF LIGHTWAVE TECHNOLOGY, 1985, 3 (02) :288-293

[7] BROAD-BAND 1.5 MU-M GAINASP TRAVELING-WAVE LASER-AMPLIFIER WITH HIGH-SATURATION OUTPUT POWER [J].

SAITOH, T ;

MUKAI, T .

ELECTRONICS LETTERS, 1987, 23 (05) :218-219

[8] GAINASP SEMICONDUCTOR-LASER AMPLIFIERS FOR SINGLE-MODE FIBER COMMUNICATIONS [J].

SIMON, JC .

JOURNAL OF LIGHTWAVE TECHNOLOGY, 1987, 5 (09) :1286-1295

[9] CHANNELED-SUBSTRATE BURIED-HETEROSTRUCTURE INGAASP/INP LASER WITH SEMIINSULATING OMVPE BASE STRUCTURE AND LPE REGROWTH [J].

WILT, DP ;

LONG, J ;

DAUTREMONTSMITH, WC ;

FOCHT, MW ;

SHEN, TM ;

HARTMAN, RL .

ELECTRONICS LETTERS, 1986, 22 (16) :869-870

← 1 →