ULTRA-LOW REFLECTIVITY 1.5-MU-M SEMICONDUCTOR-LASER PREAMPLIFIER

被引：41

作者：

OLSSON, NA

OBERG, MG

TZENG, LD

CELLA, T

机构：

[1] INST MICROWAVE TECHNOL,S-16421 KISTA,SWEDEN

[2] AT&T BELL LABS,ALLENTOWN,PA 18103

来源：

ELECTRONICS LETTERS | 1988年 / 24卷 / 09期

关键词：

D O I：

10.1049/el:19880387

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：569 / 570

页数：2

共 9 条

[1] TRAVELING-WAVE OPTICAL AMPLIFIER AT 1.3-MU-M
EISENSTEIN, G
JOHNSON, BC
RAYBON, G
[J]. ELECTRONICS LETTERS, 1987, 23 (19) : 1020 - 1022
[2] 10-GHZ OPTICAL RECEIVER USING A TRAVELING-WAVE SEMICONDUCTOR-LASER PREAMPLIFIER
MARSHALL, IW
OMAHONY, MJ
[J]. ELECTRONICS LETTERS, 1987, 23 (20) : 1052 - 1053
[3] WAVELENGTH DEPENDENCE OF NOISE-FIGURE OF A TRAVELING-WAVE GAINASP-INP LASER-AMPLIFIER
OBERG, MG
OLSSON, NA
[J]. ELECTRONICS LETTERS, 1988, 24 (02) : 99 - 100
[4] HIGH-SENSITIVITY DIRECT-DETECTION RECEIVER WITH A 1.5-MU-M OPTICAL PREAMPLIFIER
OLSSON, NA
GARBINSKI, P
[J]. ELECTRONICS LETTERS, 1986, 22 (21) : 1114 - 1116
[5] WIDE-BAND 1-5-MU-M OPTICAL RECEIVER USING TRAVELING-WAVE LASER-AMPLIFIER
OMAHONY, MJ
MARSHALL, IW
WESTLAKE, HJ
STALLARD, WG
[J]. ELECTRONICS LETTERS, 1986, 22 (23) : 1238 - 1240
[6] THEORETICAL-ANALYSIS AND FABRICATION OF ANTIREFLECTION COATINGS ON LASER-DIODE FACETS
SAITOH, T
MUKAI, T
MIKAMI, O
[J]. JOURNAL OF LIGHTWAVE TECHNOLOGY, 1985, 3 (02) : 288 - 293
[7] BROAD-BAND 1.5 MU-M GAINASP TRAVELING-WAVE LASER-AMPLIFIER WITH HIGH-SATURATION OUTPUT POWER
SAITOH, T
MUKAI, T
[J]. ELECTRONICS LETTERS, 1987, 23 (05) : 218 - 219
[8] GAINASP SEMICONDUCTOR-LASER AMPLIFIERS FOR SINGLE-MODE FIBER COMMUNICATIONS
SIMON, JC
[J]. JOURNAL OF LIGHTWAVE TECHNOLOGY, 1987, 5 (09) : 1286 - 1295
[9] CHANNELED-SUBSTRATE BURIED-HETEROSTRUCTURE INGAASP/INP LASER WITH SEMIINSULATING OMVPE BASE STRUCTURE AND LPE REGROWTH
WILT, DP
LONG, J
DAUTREMONTSMITH, WC
FOCHT, MW
SHEN, TM
HARTMAN, RL
[J]. ELECTRONICS LETTERS, 1986, 22 (16) : 869 - 870

← 1 →