PROCESS OF CHARGE COLLECTION IN SILICON DRIFTED DETECTORS WITH UNHOMOGENEOUS DISTRIBUTION OF ELECTRIC FIELD

An analysis of the charge collection process in a silicon drifted detector is presented, under the assumption that the distribution of the electric field in the detector is represented by a second order polynomial. The shape of the pulses induced by a point charge and a linearly-distributed charge is discussed in terms of the place of their generation. Agreement is found between experimentally determined time spreads of pulses generated by mono-energetic electrons, with those calculated using the present analysis of the charge collection process, in contrast to the theory of charge collection in a detector with uniform electric field. © 1969.