CONDUCTANCE TRANSIENT SPECTROSCOPY OF METAL-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS

被引：19
|
作者：
HARRANG, JP
TARDELLA, A
ROSSO, M
ALNOT, P
PERAY, JF
机构：
[1] THOMSON CSF,CENT RECH LAB,F-91401 ORSAY,FRANCE
[2] THOMSON SEMICOND,DIV COMPOSANTS HYBRIDES & MICROONDES,F-91401 ORSAY,FRANCE
来源：
JOURNAL OF APPLIED PHYSICS | 1987年 / 61卷 / 05期
关键词：
D O I：
10.1063/1.338040
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：1931 / 1936
页数：6
相关论文
共 50 条
  • [41] A PLANAR GAAS METAL-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR
    DENG, XC
    CHINESE PHYSICS, 1981, 1 (01): : 232 - 238
  • [42] Effect of Annealing Temperature on Performances of Boron-Doped Diamond Metal-Semiconductor Field-Effect Transistors
    Liu, Jiangwei
    Teraji, Tokuyuki
    Da, Bo
    Ohsato, Hirotaka
    Koide, Yasuo
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2020, 67 (04) : 1680 - 1685
  • [43] SMALL-SIGNAL NONQUASISTATIC MODELS FOR GAAS FIELD-EFFECT TRANSISTORS FOR IMPLEMENTATION IN SPICE .2. METAL-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS (MESFETS)
    LIN, HK
    ABDELMOTALEB, IM
    IEE PROCEEDINGS-G CIRCUITS DEVICES AND SYSTEMS, 1991, 138 (06): : 749 - 755
  • [44] Effects of photowashing treatment on gate leakage current of GaAs metal-semiconductor field-effect transistors
    Choi, KJ
    Moon, JK
    Park, M
    Kim, HC
    Lee, JL
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2002, 41 (5A): : 2894 - 2899
  • [45] Atomically engineered epitaxial anatase TiO2 metal-semiconductor field-effect transistors
    Kim, Brian S. Y.
    Minohara, Makoto
    Hikita, Yasuyuki
    Bell, Christopher
    Hwang, Harold Y.
    APPLIED PHYSICS LETTERS, 2018, 112 (13)
  • [46] FREQUENCY-DEPENDENCE OF TRANSCONDUCTANCE ON DEEP TRAPS IN GAAS METAL-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS
    ZHAO, JH
    TANG, PF
    HWANG, R
    CHANG, S
    JOURNAL OF APPLIED PHYSICS, 1991, 70 (03) : 1899 - 1901
  • [47] SIDEGATING IN GAAS METAL-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS UNDER LOW-LEVEL INJECTION
    SHULMAN, DD
    YOUNG, L
    JOURNAL OF APPLIED PHYSICS, 1991, 70 (11) : 7149 - 7155
  • [48] High Output Current Boron-Doped Diamond Metal-Semiconductor Field-Effect Transistors
    Liu, Jiangwei
    Teraji, Tokuyuki
    Da, Bo
    Koide, Yasuo
    IEEE ELECTRON DEVICE LETTERS, 2019, 40 (11) : 1748 - 1751
  • [49] Effects of photowashing treatment on gate leakage current of GaAs metal-semiconductor field-effect transistors
    Choi, Kyoung Jin
    Moon, Jae Kyoung
    Park, Min
    Kim, Haechon
    Lee, Jong-Lam
    Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 2002, 41 (5 A): : 2894 - 2899
  • [50] Observation of deep traps responsible for current collapse in GaN metal-semiconductor field-effect transistors
    Klein, PB
    Freitas, JA
    Binari, SC
    Wickenden, AE
    APPLIED PHYSICS LETTERS, 1999, 75 (25) : 4016 - 4018
12345