CONDUCTANCE TRANSIENT SPECTROSCOPY OF METAL-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS

被引:19
|
作者
HARRANG, JP
TARDELLA, A
ROSSO, M
ALNOT, P
PERAY, JF
机构
[1] THOMSON CSF,CENT RECH LAB,F-91401 ORSAY,FRANCE
[2] THOMSON SEMICOND,DIV COMPOSANTS HYBRIDES & MICROONDES,F-91401 ORSAY,FRANCE
关键词
D O I
10.1063/1.338040
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:1931 / 1936
页数:6
相关论文
共 50 条
  • [31] IMPACT IONIZATION AND LIGHT-EMISSION IN GAAS METAL-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS
    NEVIANI, A
    TEDESCO, C
    ZANONI, E
    CANALI, C
    MANFREDI, M
    CETRONIO, A
    JOURNAL OF APPLIED PHYSICS, 1993, 74 (06) : 4213 - 4220
  • [32] AIN metal-semiconductor field-effect transistors using Si-ion implantation
    Okumura, Hironori
    Suihkonen, Sami
    Lemettinen, Jori
    Uedono, Akira
    Zhang, Yuhao
    Piedra, Daniel
    Palacios, Tomas
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2018, 57 (04)
  • [33] TRANSIENT RADIATION STUDY OF GAAS METAL-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS IMPLANTED IN CR-DOPED AND UNDOPED SUBSTRATES
    SIMONS, M
    KING, EE
    ANDERSON, WT
    DAY, HM
    JOURNAL OF APPLIED PHYSICS, 1981, 52 (11) : 6630 - 6636
  • [34] ELECTRODE-REACTION OF GAAS METAL-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS IN DEIONIZED WATER
    HAGIO, M
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1993, 140 (08) : 2402 - 2405
  • [35] SELF-LIMITING ADVANCING GATES FOR GAAS METAL-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS
    FERNANDES, MG
    HAN, CC
    XIA, W
    LAU, SS
    KWOK, SP
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1988, 6 (06): : 1768 - 1772
  • [36] WSIO.11 SCHOTTKY GATES FOR GAAS METAL-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS
    CALLEGARI, A
    SPIERS, GD
    MAGERLEIN, JH
    GUTHRIE, HC
    JOURNAL OF APPLIED PHYSICS, 1987, 61 (05) : 2054 - 2058
  • [37] ENHANCEMENT-MODE METAL-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS USING HOMOEPITAXIAL DIAMONDS
    KAWARADA, H
    AOKI, M
    ITO, M
    APPLIED PHYSICS LETTERS, 1994, 65 (12) : 1563 - 1565
  • [38] SELECTIVE REACTIVE ION ETCHING OF GAAS/ALGAAS METAL-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS
    CAMERON, NI
    HOPKINS, G
    THAYNE, IG
    BEAUMONT, SP
    WILKINSON, CDW
    HOLLAND, M
    KEAN, AH
    STANLEY, CR
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1991, 9 (06): : 3538 - 3541
  • [39] Carrier trapping and current collapse mechanism in GaN metal-semiconductor field-effect transistors
    Anwar, AFM
    Islam, SS
    Webster, RT
    APPLIED PHYSICS LETTERS, 2004, 84 (11) : 1970 - 1972
  • [40] Effects of Field Plate and Buried Gate Structures on Silicon Carbide Metal-Semiconductor Field-Effect Transistors
    Lee, Jae-Gil
    Cho, Chun-Hyung
    Cha, Ho-Young
    IEICE TRANSACTIONS ON ELECTRONICS, 2011, E94C (05) : 842 - 845