FARADAY-EFFECT IN HG1-XMNXTE SEMIMAGNETIC SEMICONDUCTORS

被引：0
|
作者：
SAVCHUK, AI
FRASUNYAK, VM
FEDIV, VI
机构：
来源：
INORGANIC MATERIALS | 1995年 / 31卷 / 10期
关键词：
D O I：
暂无
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：1231 / 1233
页数：3
相关论文
共 50 条
  • [31] ANOMALOUS FARADAY-EFFECT IN SEMICONDUCTORS
    ABAKUMOV, VN
    AKULINIC.VV
    FIZIKA TVERDOGO TELA, 1974, 16 (10): : 3183 - 3185
  • [32] Indentation size effect in microhardness measurements of Hg1-xMnxTe
    王泽温
    介万奇
    汪晓琴
    TransactionsofNonferrousMetalsSocietyofChina, 2009, 19(S3) (S3) : 762 - 766
  • [33] PHOTOLUMINESCENCDE STUDIES OF HG1-XMNXTE CRYSTALS
    PIOTROWSKI, T
    TOMM, JW
    PUHLMANN, N
    GENSICKE, S
    SCHMIDT, H
    WERNER, L
    ACTA PHYSICA POLONICA A, 1990, 77 (01) : 195 - 198
  • [34] MAGNETIC-FIELD-INDUCED ELECTRON LOCALIZATION IN NARROW-GAP SEMIMAGNETIC HG1-XMNXTE
    WROBEL, J
    DIETL, T
    KARCZEWSKI, G
    JAROSZYNSKI, J
    PLESIEWICZ, W
    LENARD, A
    DYBIEC, M
    SAWICKI, M
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1990, 5 : S299 - S303
  • [35] THE MOVPE GROWTH AND CHARACTERIZATION OF HG1-XMNXTE
    FUNAKI, M
    LEWIS, JE
    HALLAM, TD
    LI, CR
    HALDER, SK
    BRINKMAN, AW
    TANNER, BK
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1993, 8 (01) : S200 - S204
  • [36] TUNNELING TO RESONANCE STATES IN HG1-XMNXTE
    OKONIEWSKI, A
    RAULUSZKIEWICZ, J
    PHYSICA B & C, 1984, 123 (02): : 193 - 200
  • [37] COMPOSITION GRADIENTS AND SEGREGATION IN HG1-XMNXTE
    KREMER, RE
    TAMJIDI, MR
    JOURNAL OF CRYSTAL GROWTH, 1986, 75 (03) : 415 - 420
  • [38] OSCILLATIONS OF THE INTENSITY OF THE PHOTOLUMINESCENCE EMITTED FROM A SEMIMAGNETIC SEMICONDUCTOR HG1-XMNXTE IN A MAGNETIC-FIELD
    GELMONT, BL
    IVANOVOMSKII, VI
    POSTOLAKI, IT
    SMIRNOV, VA
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1986, 20 (03): : 318 - 320
  • [39] ELECTRICAL AND MAGNETIC-PROPERTIES OF THE SEMIMAGNETIC SEMICONDUCTORS HG1-XMNXTE1-YSEY
    KULBACHINSKII, VA
    MARYANCHUK, PD
    CHURILOV, IA
    SEMICONDUCTORS, 1995, 29 (11) : 1047 - 1050
  • [40] INVERSE FARADAY-EFFECT IN FERROMAGNETIC SEMICONDUCTORS
    GENKIN, GM
    TOKMAN, ID
    FIZIKA TVERDOGO TELA, 1983, 25 (01): : 276 - 278
12345